scholarly journals Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism

2022 ◽  
Vol 512 ◽  
pp. 54-59
Author(s):  
Iván Santos ◽  
Ana Caballo ◽  
María Aboy ◽  
Luis A. Marqués ◽  
Pedro López ◽  
...  
Keyword(s):  
Energy Barriers

Insights into the synergistic role of metal–lattice oxygen site pairs in four-centered C–H bond activation of methane: the case of CuO

2016 ◽  
Vol 6 (11) ◽  
pp. 3984-3996 ◽  
Author(s):  
Jithin John Varghese ◽  
Quang Thang Trinh ◽  
Samir H. Mushrif
Keyword(s):  
Activation Energy ◽  
Copper Oxide ◽  
Bond Activation ◽  
Lattice Oxygen ◽  
Oxide Surfaces ◽  
Energy Barriers ◽  
Metal Lattice ◽  
Oxygen Site ◽  
Site Pair

Of the three mechanisms for activation of methane on copper and copper oxide surfaces, the under-coordinated Cu–O site pair mediated mechanism on CuO surfaces has the lowest activation energy barriers.

scholarly journals Hydrogen diffusion out of ruthenium—an ab initio study of the role of adsorbates

2020 ◽  
Vol 22 (15) ◽  
pp. 7935-7941
Author(s):  
Chidozie Onwudinanti ◽  
Geert Brocks ◽  
Vianney Koelman ◽  
Thomas Morgan ◽  
Shuxia Tao
Keyword(s):  
Ab Initio ◽  
Hydrogen Diffusion ◽  
Ab Initio Study ◽  
Energy Barriers ◽  
Near Surface

The energy barriers to hydrogen diffusion from near-surface interstitial sites in ruthenium are determined by the presence of adsorbates.

On the role of the termolecular reactions 2O2 + H2 → 2HO2 and 2O2 + H2 → H + HO2 + O2 in formation of the first radicals in hydrogen combustion: ab initio predictions of energy barriers

2017 ◽  
Vol 19 (3) ◽  
pp. 2175-2185 ◽  
Author(s):  
M. Monge-Palacios ◽  
Homayoon Rafatijo
Keyword(s):  
Ab Initio ◽  
Barrier Height ◽  
Hydrogen Combustion ◽  
Initial Reaction ◽  
Energy Barriers

We have identified a new initial reaction in hydrogen combustion with a low barrier height and thus competitive: 2O2 + H2 → 2HO2.

scholarly journals Energy barriers to anion transport in polyelectrolyte multilayer nanofiltration membranes: Role of intra-pore diffusion

2020 ◽  
Vol 603 ◽  
pp. 117921 ◽  
Author(s):  
Sigyn B. Sigurdardottir ◽  
Ryan M. DuChanois ◽  
Razi Epsztein ◽  
Manuel Pinelo ◽  
Menachem Elimelech
Keyword(s):  
Anion Transport ◽  
Pore Diffusion ◽  
Nanofiltration Membranes ◽  
Energy Barriers ◽  
Polyelectrolyte Multilayer

Increased power factors of organic–inorganic nanocomposite thermoelectric materials and the role of energy filtering

2017 ◽  
Vol 5 (30) ◽  
pp. 15891-15900 ◽  
Author(s):  
Zhiming Liang ◽  
Mathias J. Boland ◽  
Kamal Butrouna ◽  
Douglas R. Strachan ◽  
Kenneth R. Graham
Keyword(s):  
Thermoelectric Materials ◽  
Large Energy ◽  
Energy Barriers ◽  
Energy Filtering

Enhancements in the performance of organic–inorganic nanocomposite thermoelectrics may be obtained with both small and large energy barriers at the organic–inorganic interfaces.

scholarly journals Condensation on Superhydrophobic Surfaces: The Role of Local Energy Barriers and Structure Length Scale

Langmuir ◽  
2012 ◽  
Vol 28 (40) ◽  
pp. 14424-14432 ◽  
Author(s):  
Ryan Enright ◽  
Nenad Miljkovic ◽  
Ahmed Al-Obeidi ◽  
Carl V. Thompson ◽  
Evelyn N. Wang
Keyword(s):  
Superhydrophobic Surfaces ◽  
Length Scale ◽  
Local Energy ◽  
Energy Barriers

Step-graded AlGaN vs superlattice: Role of strain relief layer in dynamic on-resistance degradation

2021 ◽  
Author(s):  
Xiaoguang He ◽  
Yuxia Feng ◽  
Xuelin Yang ◽  
Shan Wu ◽  
Zidong Cai ◽  
...  
Keyword(s):  
Si Substrate ◽  
Power Devices ◽  
Energy Barriers ◽  
Strain Relief ◽  
Back Gate ◽  
Resistance Degradation ◽  
Different Types ◽  
Leakage Measurement ◽  
Vertical Leakage

Abstract In this work, we study the impacts of different types of strain relief layer (SRL) on dynamic on-resistance (Ron) degradation of GaN power devices on Si by back-gate ramping and vertical leakage measurement. Our study reveals that the SRL has important effects on the dynamic Ron. Compared with step-graded AlGaN SRL, the superlattice SRL possesses much more energy barriers, which can more effectively block the leakage of holes from GaN buffer and the injection of electrons from Si substrate. Enhancing the carrier blocking ability of SRL could contribute to the suppression of dynamic Ron degradation.

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