scholarly journals Deuterium and helium outgassing following plasma discharges in WEST: Delayed D outgassing during D-to-He changeover experiments studied with threshold ionization mass spectrometry

2021 ◽  
Vol 26 ◽  
pp. 100885
Author(s):  
R. Bisson ◽  
E.A. Hodille ◽  
J. Gaspar ◽  
D. Douai ◽  
T. Wauters ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Plasma Discharges ◽  
Threshold Ionization

Detection of nitrogen metastable molecules by using the threshold ionization mass spectrometry

2004 ◽  
Vol 147 (1) ◽  
pp. 17-24 ◽  
Author(s):  
Satoshi Matsuda ◽  
Hirotsugu Shimosato ◽  
Motoshige Yumoto ◽  
Takao Sakai
Keyword(s):  
Mass Spectrometry ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Threshold Ionization

scholarly journals Detection of Nitrogen Metastable Molecules by using the Threshold Ionization Mass Spectrometry.

2003 ◽  
Vol 123 (2) ◽  
pp. 167-172 ◽  
Author(s):  
Satoshi Matsuda ◽  
Hirotsugu Shimosato ◽  
Motoshige Yumoto ◽  
Takao Sakai
Keyword(s):  
Mass Spectrometry ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Threshold Ionization

Threshold ionization mass spectrometry of reactive species in remote Ar∕C2H2 expanding thermal plasma

2005 ◽  
Vol 23 (5) ◽  
pp. 1400-1412 ◽  
Author(s):  
Jan Benedikt ◽  
Sumit Agarwal ◽  
Dimitri Eijkman ◽  
Wouter Vandamme ◽  
Mariadriana Creatore ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thermal Plasma ◽  
Reactive Species ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Threshold Ionization

Radical Species Distributions in Hot-Wire Chemical Vapor Deposition Probed Via Threshold Ionization Mass Spectrometry and Direct Simulation Monte Carlo Techniques

2001 ◽  
Vol 664 ◽  
Author(s):  
Jason K. Holt ◽  
Maribeth Swiatek ◽  
David G. Goodwin ◽  
Harry A. Atwater ◽  
R.P. Muller ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Direct Simulation Monte Carlo ◽  
Chemical Vapor ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Hot Wire ◽  
Threshold Ionization

ABSTRACTMonte Carlo simulations of hot-wire chemical vapor deposition (HWCVD) gas ambients indicate different flux ratios (SiH3/Si and H/SiHx) under conditions for amorphous or polycrystalline silicon growth. Gas-phase reactions of Si with ambient SiH4 studied using abinitio methods reveals that collisional stabilization of the adduct (H3SiSiH) is unlikely under typical HWCVD growth pressures, but an energetically favorable, low-pressure pathway has been identified that leads to the formation of Si2H2 and H2. Threshold ionization mass spectrometry has revealed significant quantities of the radical SiH2 at HWCVD growth pressures, indicative of heterogeneous pyrolysis. Mass spectrometry at low pressures suggests that incident silane dissociatively adsorbs at the wire and undergoes sequential H elimination to produce subhydrides. Disilicon species were not detected in significant quantities at HWCVD growth pressures. Finally, hot wire operation in a pure H2 ambient yields SiH4 as the dominant etching product from the silicon-coated walls of the growth chamber.

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