High speed stress measurement technique based on photoelastic modulator (PEM) and galvano-scanner

2021 ◽  
Vol 136 ◽  
pp. 106306
Author(s):  
Fei Su ◽  
Bowen Zhang ◽  
Tenghui Li
1991 ◽  
Vol 224 ◽  
Author(s):  
C. Schietinger ◽  
B. Adams ◽  
C. Yarling

AbstractA novel wafer temperature and emissivity measurement technique for rapid thermal processing (RTP) is presented. The ‘Ripple Technique’ takes advantage of heating lamp AC ripple as the signature of the reflected component of the radiation from the wafer surface. This application of Optical Fiber Thermometry (OFT) allows high speed measurement of wafer surface temperatures and emissivities. This ‘Ripple Technique’ is discussed in theoretical and practical terms with wafer data presented. Results of both temperature and emissivity measurements are presented for RTP conditions with bare silicon wafers and filmed wafers.


Author(s):  
K. Taylor ◽  
B. Nelson ◽  
A. Chong ◽  
H. Nguyen ◽  
H. Lin ◽  
...  

2016 ◽  
Vol 827 ◽  
pp. 300-303
Author(s):  
Lubos Pazdera ◽  
Jaroslav Smutny

The aim of the paper is focused on the analysis of the stress measurement in the railway substructure in the turnout with the movable frog prototype designed for a high speed. The evaluations were compared the measurement and the results obtained with theoretical presumptions. The Discrete Wavelet Transformation for the decomposition of the stress measurement and its evaluation is described. Two sections in the turnout with the movable frog were used for the measurement and signal analysis.


1993 ◽  
Vol 310 ◽  
Author(s):  
Chen C. Li ◽  
Seshu B. Desu

AbstractThe primary objective of this study is to demonstrate an in–situ stress measurement technique for the study of formation kinetics of multicomponent thin films such as PbTiO3. Film stress–temperature and film stress–time plots have been successfully used to monitor the phase formation of PbTiO3 films in a in–situ way. It is believed that the mechanism of this reaction was dominated by grain boundary diffusion of the participating cations. The activation energy of the PbTiO3 phase formation from PbO/TiO2 double layers was estimated to be 108 kcal/mole.


Sign in / Sign up

Export Citation Format

Share Document