Low threshold lasing from silicon Mie resonators

2022 ◽  
Vol 148 ◽  
pp. 107762
Author(s):  
Shengqiong Chen ◽  
Longjie Li ◽  
Feng Jin ◽  
Cheng Lu ◽  
Shengjie Zhao ◽  
...  
Keyword(s):  
2014 ◽  
Author(s):  
Chris H. J. Hartgerink
Keyword(s):  

Planta Medica ◽  
2011 ◽  
Vol 77 (12) ◽  
Author(s):  
S Mittler ◽  
MH Müller ◽  
MS Kasparek ◽  
O Kelber ◽  
D Weiser ◽  
...  
Keyword(s):  

2011 ◽  
Vol 4 (1) ◽  
pp. 93-109 ◽  
Author(s):  
Anne Reinertsen

This is about the pedagogical experience ahead of or beyond any pedagogical activity or action. It is therefore about perfectibility and/or dealing with something both theoretically and existentially. It is about inclusion and dialogue, but in an indirect manner, and school as a low threshold institution: heterogeneity, pluralism and multiculturalism as the primary characteristics of a modern school in a modern society. This makes school an institution important to life and knowledge. The need for a pedagogy created through a strong scientific orientation through practice or as I prefer; realism, urgent: Pedagogy framed by a good, relevant and strong understanding of context. This makes demands on teachers' competence. It demands more than possessing pedagogical scientific competence. A certain extent of double(d) competence and more is demanded both about what happens in science and about what happens in society and openness always through language and critical thinking or philosophy. This is about becoming teacher in/and for the fractured future and about what we might “give” (student) teachers in addition.


Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
James C. Tsang ◽  
Moyra K. McManus ◽  
Mark B. Ketchen

Abstract Hot-carrier luminescence emission is used to diagnose the cause of excess quiescence current, IDDQ, in a low power circuit implemented in CMOS 7SF technology. We found by optical inspection of the chip that the high IDDQ is related to the low threshold, Vt, device process and in particular to transistors with minimum channel length (0.18 μm). In this paper we will also show that it is possible to gain knowledge regarding the operating conditions of the IC from the analysis of optical emission due to leakage current, aside from simply locating defects and failures. In particular, we will show how it is possible to calculate the voltage drop across the circuit power grid from time-integrated acquisitions of leakage luminescence.


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