<p>Mixed cation
and anion based perovskites solar cells (FAPbI<sub>3</sub>)<sub>0.85</sub>(MAPbBr<sub>3</sub>)<sub>0.15</sub>
gave enhanced stability under outdoor conditions, however, it yielded limited power
conversion efficiency when SnO<sub>2</sub> and Spiro-OMeTAD were employed as electron
and hole transport layer (ETL/HTL). The inevitable interfacial recombination of
charge carriers at ETL/perovskite and perovskite/HTL interface diminished the
efficiency in planar (n-i-p) perovskite solar cells. Employing computational
approach for uni-dimensional device simulator, the effect of band offset on
charge recombination at both interfaces were investigated. We noted that it
acquired cliff structure when the conduction band minimum of the ETL is lower
than that of the perovskite, and thus maximizes interfacial recombination.
However, if the conduction band minimum of ETL is higher than perovskite, i.e.
spike structure is formed, which improve the performance of solar cell up to an
optimum value of conduction band offset allowing to reach performance of 25.21%,
with an open circuit voltage (<i>V</i><sub>oc</sub>) of 1231 mV, a current density
<i>J</i><sub>sc</sub> of 24.57 mA/cm<sup>2</sup> and a fill factor of 83.28%. Additionally,
we found that beyond the optimum offset value, large spike structure could decrease
the performance. With an optimized, energy level of Spiro-OMeTAD and the
thickness of mixed-perovskite layer performance of 26.56 % can be attained. Our
results demonstrate a detailed understanding about the energy level tuning between
the charge selective layers and perovskite and furthermore how the improvement
in PV performance can be achieved by adjusting the energy level offset.</p>
Effect of the conduction band offset on interfacial recombination behavior of the planar perovskite solar cells
