Relationship between the intermediate phases of the sputtered Zn(O,S) buffer layer and the conduction band offset in Cd-free Cu(In,Ga)Se2 solar cells

CrystEngComm ◽  
2020 ◽  
Vol 22 (26) ◽  
pp. 4416-4426
Author(s):  
Qian Du ◽  
Boyan Li ◽  
Sihan Shi ◽  
Kaizhi Zhang ◽  
Yunxiang Zhang ◽  
...  

Intermediate phases are formed in Zn(O,S) thin films with different oxygen fluxes, affecting the device performance.

2015 ◽  
Vol 17 (23) ◽  
pp. 15355-15364 ◽  
Author(s):  
K. Xerxes Steirer ◽  
Rebekah L. Garris ◽  
Jian V. Li ◽  
Michael J. Dzara ◽  
Paul F. Ndione ◽  
...  

Performance deficiencies from the too large conduction band offset between Cu2ZnSnSe4/ZnOS heterojunctions are abated by the inclusion of a co-solvent during aqueous growth of the buffer layer.


2017 ◽  
Vol 47 (2) ◽  
pp. 1201-1207 ◽  
Author(s):  
Yunfei Chen ◽  
Xuehai Tan ◽  
Shou Peng ◽  
Cao Xin ◽  
Alan E. Delahoy ◽  
...  

2017 ◽  
Vol 56 (8S2) ◽  
pp. 08MC09 ◽  
Author(s):  
Takeshi Umehara ◽  
Faris Akira Bin Mohd Zulkifly ◽  
Kazuyoshi Nakada ◽  
Akira Yamada

2001 ◽  
Vol 89 (12) ◽  
pp. 8327-8330 ◽  
Author(s):  
Takashi Minemoto ◽  
Yasuhiro Hashimoto ◽  
Takuya Satoh ◽  
Takayuki Negami ◽  
Hideyuki Takakura ◽  
...  

2001 ◽  
Vol 67 (1-4) ◽  
pp. 83-88 ◽  
Author(s):  
Takashi Minemoto ◽  
Takuya Matsui ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa ◽  
Takayuki Negami ◽  
...  

2007 ◽  
Vol 1012 ◽  
Author(s):  
Takashi Minemoto ◽  
Yasuhiro Hashimoto ◽  
Takuya Satoh ◽  
Takayuki Negami ◽  
Hideyuki Takakura

AbstractThe impact of the conduction band offset (CBO) between window/Cu(In,Ga)Se2 (CIGS) layers on the light soaking (LS) effect in CIGS solar cells has been studied with continuous CBO control using a (Zn,Mg)O (ZMO) window layer. Two types of CIGS solar cells with different window/buffer/absorber layers configurations were fabricated, i.e., ZMO/CIGS (without buffer layer) and ZMO/CdS/CIGS structures. The CBO values between ZMO and CIGS layers were controlled to -0.15~0.25 eV. Plus and minus signs of CBO indicate the conduction band minimums of ZMO above and below that of CIGS, respectively. Current-voltage (J-V) characteristics of the solar cells with different LS durations revealed that a positive CBO value higher than 0.16 eV induces J-V curve distortion, i.e., LS effect, and all the J-V characteristics stabilized in 30 min. The degrees of the LS effect were dominated by the CBO value between ZMO and CIGS layers in the both structure regardless of the existence of CdS buffer layers. These results indicate that the LS effect is dominated by the highest barrier for photo-generated electrons in the conduction band diagram, i.e., the CBO between ZMO and CIGS layers, and quantitatively the LS effect emerges the CBO value higher than 0.16 eV.


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