Unravelling the effect of defect density, grain boundary and gradient doping in an efficient lead-free formamidinium perovskite solar cell

2022 ◽  
Vol 124 ◽  
pp. 111952
Author(s):  
Faisal Saeed ◽  
Hasan Erteza Gelani
2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Farhana Anwar ◽  
Rafee Mahbub ◽  
Sakin Sarwar Satter ◽  
Saeed Mahmud Ullah

Simulation has been done using SCAPS-1D to examine the efficiency of CH3NH3SnI3-based solar cells including various HTM layers such as spiro-OMeTAD, Cu2O, and CuSCN. ZnO nanorod array has been considered as an ETM layer. Device parameters such as thickness of the CH3NH3SnI3 layer, defect density of interfaces, density of states, and metal work function were studied. For optimum parameters of all three structures, efficiency of 20.21%, 20.23%, and 18.34% has been achieved for spiro-OMeTAD, Cu2O, and CuSCN, respectively. From the simulations, an alternative lead-free perovskite solar cell is introduced with the CH3NH3SnI3 absorber layer, ZnO nanorod ETM layer, and Cu2O HTM layer.


In this work, the effect of some parameters on tin-based perovskite (CH3NH3SnI3) solar cell were studied through device simulation with respect to adjusting the doping concentration of the perovskite absorption layer, its thickness and the electron affinities of the electron transport medium and hole transport medium, as well as the defect density of the perovskite absorption layer and hole mobility of hole transport material (HTM). A device simulator; the one-dimensional Solar Cells Capacitance Simulator (SCAPS‑1D) program was used for simulating the tin-based perovskite solar cells. The current-voltage (J-V) characteristic curve obtained by simulating the device without optimization shows output cell parameters which include; open circuit voltage (Voc) = 0.64V, short circuit current density (Isc) = 28.50mA/, fill factor (FF) = 61.10%, and power conversion efficiency (PCE) = 11.30% under AM1.5 simulated sunlight of 100mW/cm2 at 300K. After optimization, values of the doping concentration, defect density, electron affinity of electron transport material and hole transport material were determined to be: 1.0x1016cm-3, 1.0x1015cm-3, 3.7 eV and 2.3 eV respectively. Appreciable values of solar cell parameters were obtained with Jsc of 31.38 mA/cm2, Voc of 0.84 V, FF of 76.94% and PCE of 20.35%. when compared with the initial device without optimization, it shows improvement of ~1.10 times in Jsc, ~1.80 times in PCE, ~1.31 times in Voc and ~1.26 time in FF. The results show that the lead-free CH3NH3SnI3 perovskite solar cell which is environmentally friendly is a potential solar cell with high theoretical efficiency of 20.35%.


2020 ◽  
Vol 34 (24) ◽  
pp. 2050258
Author(s):  
Anjan Kumar ◽  
Sangeeta Singh

Metal halide-perovskite solar cells have managed to attain soaring heights in power conversion efficiency in the past decade, rising from 3.8% to around 24% in 2019. Formal lead-based perovskites have captivated massive attention because of their then toxic nature and short-term stability of fabricated devices. Therefore, lead-free perovskites have drawn the researcher’s interest in recent years. In this work, we projected a unique planar perovskite structure constituted of [Formula: see text] Tungsten Disulfide [Formula: see text] lead-free perovskite[Formula: see text]. Herein, Tungsten Disulfide (WS2) acts as an electron transport layer (ETL) due to its excellent electron transport capability. The cuprous oxide is used as a hole transport layer (HTL) due to its perfect band alignment with perovskites. The proposed structure is quantitatively analyzed using a solar cell capacitance simulator. The simulation carried out revealed that tin halide perovskite (CH3NH3SnI3) is having the great potential to be an absorbent layer. The proposed configuration demonstrated excellent power configuration efficiency (PCE) of 23% at an optimized thickness of different segments. The impact of neutral defect density and position of defect energy level with respect to active layer on device performance was quantitatively analyzed. The results showed that values of performance parameters ([Formula: see text], FF, [Formula: see text] and PCE) of proposed device configurations are drastically reduced with increasing the total defect density of interfacial and perovskite layers. These simulated results will help the researchers working in the specific area of lead-free perovskite solar cell (LFPSC) fabrication.


Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1508
Author(s):  
Ana C. Piñón Reyes ◽  
Roberto C. Ambrosio Lázaro ◽  
Karim Monfil Leyva ◽  
José A. Luna López ◽  
Javier Flores Méndez ◽  
...  

In this paper, a n-i-p planar heterojunction simulation of Sn-based iodide perovskite solar cell (PSC) is proposed. The solar cell structure consists of a Fluorine-doped tin oxide (FTO) substrate on which titanium oxide (TiO2) is placed; this material will act as an electron transporting layer (ETL); then, we have the tin perovskite CH3NH3SnI3 (MASnI3) which is the absorber layer and next a copper zinc and tin sulfide (CZTS) that will have the function of a hole transporting layer (HTL). This material is used due to its simple synthesis process and band tuning, in addition to presenting good electrical properties and stability; it is also a low-cost and non-toxic inorganic material. Finally, gold (Au) is placed as a back contact. The lead-free perovskite solar cell was simulated using a Solar Cell Capacitance Simulator (SCAPS-1D). The simulations were performed under AM 1.5G light illumination and focused on getting the best efficiency of the solar cell proposed. The thickness of MASnI3 and CZTS, band gap of CZTS, operating temperature in the range between 250 K and 350 K, acceptor concentration and defect density of absorber layer were the parameters optimized in the solar cell device. The simulation results indicate that absorber thicknesses of 500 nm and 300 nm for CZTS are appropriate for the solar cell. Further, when optimum values of the acceptor density (NA) and defect density (Nt), 1016 cm−3 and 1014 cm−3, respectively, were used, the best electrical values were obtained: Jsc of 31.66 mA/cm2, Voc of 0.96 V, FF of 67% and PCE of 20.28%. Due to the enhanced performance parameters, the structure of the device could be used in applications for a solar energy harvesting system.


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