scholarly journals Study of a Lead-Free Perovskite Solar Cell Using CZTS as HTL to Achieve a 20% PCE by SCAPS-1D Simulation

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1508
Author(s):  
Ana C. Piñón Reyes ◽  
Roberto C. Ambrosio Lázaro ◽  
Karim Monfil Leyva ◽  
José A. Luna López ◽  
Javier Flores Méndez ◽  
...  
Keyword(s):  
Solar Cell ◽  
Defect Density ◽  
Low Cost ◽  
Cell Structure ◽  
Perovskite Solar Cell ◽  
Absorber Layer ◽  
Lead Free ◽  
Synthesis Process ◽  
Light Illumination ◽  
Tin Sulfide

In this paper, a n-i-p planar heterojunction simulation of Sn-based iodide perovskite solar cell (PSC) is proposed. The solar cell structure consists of a Fluorine-doped tin oxide (FTO) substrate on which titanium oxide (TiO2) is placed; this material will act as an electron transporting layer (ETL); then, we have the tin perovskite CH3NH3SnI3 (MASnI3) which is the absorber layer and next a copper zinc and tin sulfide (CZTS) that will have the function of a hole transporting layer (HTL). This material is used due to its simple synthesis process and band tuning, in addition to presenting good electrical properties and stability; it is also a low-cost and non-toxic inorganic material. Finally, gold (Au) is placed as a back contact. The lead-free perovskite solar cell was simulated using a Solar Cell Capacitance Simulator (SCAPS-1D). The simulations were performed under AM 1.5G light illumination and focused on getting the best efficiency of the solar cell proposed. The thickness of MASnI3 and CZTS, band gap of CZTS, operating temperature in the range between 250 K and 350 K, acceptor concentration and defect density of absorber layer were the parameters optimized in the solar cell device. The simulation results indicate that absorber thicknesses of 500 nm and 300 nm for CZTS are appropriate for the solar cell. Further, when optimum values of the acceptor density (NA) and defect density (Nt), 1016 cm−3 and 1014 cm−3, respectively, were used, the best electrical values were obtained: Jsc of 31.66 mA/cm2, Voc of 0.96 V, FF of 67% and PCE of 20.28%. Due to the enhanced performance parameters, the structure of the device could be used in applications for a solar energy harvesting system.

scholarly journals Effect of Different HTM Layers and Electrical Parameters on ZnO Nanorod-Based Lead-Free Perovskite Solar Cell for High-Efficiency Performance

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Farhana Anwar ◽  
Rafee Mahbub ◽  
Sakin Sarwar Satter ◽  
Saeed Mahmud Ullah
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Defect Density ◽  
Nanorod Array ◽  
Perovskite Solar Cell ◽  
Lead Free ◽  
Zno Nanorod ◽  
Metal Work Function ◽  
Optimum Parameters ◽  
Efficiency Performance

Simulation has been done using SCAPS-1D to examine the efficiency of CH3NH3SnI3-based solar cells including various HTM layers such as spiro-OMeTAD, Cu2O, and CuSCN. ZnO nanorod array has been considered as an ETM layer. Device parameters such as thickness of the CH3NH3SnI3 layer, defect density of interfaces, density of states, and metal work function were studied. For optimum parameters of all three structures, efficiency of 20.21%, 20.23%, and 18.34% has been achieved for spiro-OMeTAD, Cu2O, and CuSCN, respectively. From the simulations, an alternative lead-free perovskite solar cell is introduced with the CH3NH3SnI3 absorber layer, ZnO nanorod ETM layer, and Cu2O HTM layer.

scholarly journals Modeling and Simulation of Lead-Free Perovskite Solar Cell Using SCAPS-1D

2021 ◽  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electron Transport ◽  
Doping Concentration ◽  
Defect Density ◽  
Perovskite Solar Cell ◽  
Hole Transport ◽  
Lead Free ◽  
Cell Parameters ◽  
Transport Medium

In this work, the effect of some parameters on tin-based perovskite (CH3NH3SnI3) solar cell were studied through device simulation with respect to adjusting the doping concentration of the perovskite absorption layer, its thickness and the electron affinities of the electron transport medium and hole transport medium, as well as the defect density of the perovskite absorption layer and hole mobility of hole transport material (HTM). A device simulator; the one-dimensional Solar Cells Capacitance Simulator (SCAPS‑1D) program was used for simulating the tin-based perovskite solar cells. The current-voltage (J-V) characteristic curve obtained by simulating the device without optimization shows output cell parameters which include; open circuit voltage (Voc) = 0.64V, short circuit current density (Isc) = 28.50mA/, fill factor (FF) = 61.10%, and power conversion efficiency (PCE) = 11.30% under AM1.5 simulated sunlight of 100mW/cm2 at 300K. After optimization, values of the doping concentration, defect density, electron affinity of electron transport material and hole transport material were determined to be: 1.0x1016cm-3, 1.0x1015cm-3, 3.7 eV and 2.3 eV respectively. Appreciable values of solar cell parameters were obtained with Jsc of 31.38 mA/cm2, Voc of 0.84 V, FF of 76.94% and PCE of 20.35%. when compared with the initial device without optimization, it shows improvement of ~1.10 times in Jsc, ~1.80 times in PCE, ~1.31 times in Voc and ~1.26 time in FF. The results show that the lead-free CH3NH3SnI3 perovskite solar cell which is environmentally friendly is a potential solar cell with high theoretical efficiency of 20.35%.

scholarly journals Simulating the performance of a highly efficient CuBi2O4-based thin-film solar cell

2021 ◽  
Vol 3 (5) ◽  
Author(s):  
Adnan Hosen ◽  
Md. Suruz Mian ◽  
Sheikh Rashel Al Ahmed
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Current Density ◽  
High Efficiency ◽  
Defect Density ◽  
Cell Structure ◽  
Short Circuit ◽  
Open Circuit ◽  
Absorber Layer ◽  
Device Structure

AbstractIn this study, copper bismuth oxide (CuBi2O4) absorber-based thin film heterojunction solar cell structure consisting of Al/FTO/CdS/CuBi2O4/Ni has been proposed. The proposed solar cell device structure has been modeled and analyzed by using the solar cell capacitance simulator in one dimension (SCAPS-1D) software program. The performance of the proposed photovoltaic device is evaluated numerically by varying thickness, doping concentrations, defect density, operating temperature, back metal contact work function, series and shunt resistances. The current density–voltage behaviors at dark and under illumination are investigated. To realize the high efficiency CuBi2O4-based solar cell, the thickness, acceptor and donor densities, defect densities of different layers have been optimized. The present work reveals that the power conversion efficiency can be enhanced by increasing the absorber layer thickness. The efficiency of 26.0% with open-circuit voltage of 0.97 V, short-circuit current density of 31.61 mA/cm2, and fill-factor of 84.58% is achieved for the proposed solar cell at the optimum 2.0-μm-thick CuBi2O4 absorber layer. It is suggested that the p-type CuBi2O4 material proposed in the present study can be employed as a promising absorber layer for applications in the low cost and high efficiency thin-film solar cells.

Numerical modeling of planar lead free perovskite solar cell using tungsten disulfide (WS2) as an electron transport layer and Cu2O as a hole transport layer

2020 ◽  
Vol 34 (24) ◽  
pp. 2050258
Author(s):  
Anjan Kumar ◽  
Sangeeta Singh
Keyword(s):  
Solar Cell ◽  
Electron Transport ◽  
Defect Density ◽  
Perovskite Solar Cell ◽  
Hole Transport ◽  
Tungsten Disulfide ◽  
Transport Layer ◽  
Lead Free ◽  
Electron Transport Layer ◽  
Hole Transport Layer

Metal halide-perovskite solar cells have managed to attain soaring heights in power conversion efficiency in the past decade, rising from 3.8% to around 24% in 2019. Formal lead-based perovskites have captivated massive attention because of their then toxic nature and short-term stability of fabricated devices. Therefore, lead-free perovskites have drawn the researcher’s interest in recent years. In this work, we projected a unique planar perovskite structure constituted of [Formula: see text] Tungsten Disulfide [Formula: see text] lead-free perovskite[Formula: see text]. Herein, Tungsten Disulfide (WS2) acts as an electron transport layer (ETL) due to its excellent electron transport capability. The cuprous oxide is used as a hole transport layer (HTL) due to its perfect band alignment with perovskites. The proposed structure is quantitatively analyzed using a solar cell capacitance simulator. The simulation carried out revealed that tin halide perovskite (CH3NH3SnI3) is having the great potential to be an absorbent layer. The proposed configuration demonstrated excellent power configuration efficiency (PCE) of 23% at an optimized thickness of different segments. The impact of neutral defect density and position of defect energy level with respect to active layer on device performance was quantitatively analyzed. The results showed that values of performance parameters ([Formula: see text], FF, [Formula: see text] and PCE) of proposed device configurations are drastically reduced with increasing the total defect density of interfacial and perovskite layers. These simulated results will help the researchers working in the specific area of lead-free perovskite solar cell (LFPSC) fabrication.

scholarly journals A Review of Different Techniques for Improving the Performance of Amorphous Silicon based Solar Cells

2019 ◽  
Vol 01 (02) ◽  
pp. 172-181 ◽  
Author(s):  
Ahmed Idda ◽  
Leila Ayat ◽  
said Bentouba ◽  
◽  
◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Defect Density ◽  
Low Cost ◽  
Wide Band ◽  
Optimization Techniques ◽  
Absorber Layer ◽  
Window Layer

Hydrogeneted amorphous silicon (a-Si:H) based solar cells are promising candidates for future developments in the photovoltaic industry. In fact, amorphous silicon technology offers significant advantages including low cost fabrication and possibility to deposition on flexible substrat as well as low temperature fabrication. Much progress has been made since the first single junction cell in amorphous silicon made in 1976 by Carlson and Wronski. However, the performance of the solar cells based on a-Si:H is limited by the high defect density and degradation induced by exposure to light, or Staebler-Wronski effect. To become competitive, the performance of the solar cells based on a-Si:H must be improved. In order to improve the performance of a-Si:H solar cells, much research is directed to optimization techniques. The improvement in performance is therefore based on the optimization of the different layers of the solar cell, in particular, the window layer and the absorber layer (intrinsic). The aim of this work is to give an overview on the different techniques and strategies that is used to improve the performance of solar cell. This work is therefore focus in three main areas: first, optimization of window layer, in particular, the p/i interface using wide band gap alloys such as a-SiC:H, second development of high quality absorber layer using band gap engineering, and alloys such as a-SiGe:H. last, optimizing n-type layer and i/n interface.

Theoretical study of highly efficient CH3NH3SnI3 based Perovskite solar cell with CuInS2 quantum dot

2021 ◽  
Author(s):  
Gagandeep Kundu ◽  
Mukhtiyar Singh ◽  
Ramesh Kumar ◽  
Ramesh Kumar ◽  
Vinamrita Singh ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Defect Density ◽  
Cell Structure ◽  
Perovskite Solar Cells ◽  
Perovskite Solar Cell ◽  
Recent Experimental Study ◽  
Hole Transporting ◽  
In Series ◽  
The Impact

Abstract Simulation studies have been carried out for n-i-p perovskite solar cell (PSC) structure i.e. ITO/SnO2/CH3NH3PbI3/CuInS2/Au. We have considered this cell as our primary structure and is simulated using Solar Cell Capacitance Simulator (SCAPS-1D) software. Here, the CuInS2 quantum dot acts as an inorganic hole transporting layer. Further, the use of the CuInS2 quantum dot in PSCs has been explored by simulating twenty different cell structures. These perovskite solar cells are based on recently used absorber layers, i.e., MASnI3, FAPbI3, and (FAPbI3)0.97(MAPbBr1.5Cl1.5)0.03, and electron transporting layers, i.e., SnO2, TiO2, ZnO, C60, and IGZO. The performance of all structures has been optimized by varying the thickness of the absorber layers and ETLs. The cell structure, ITO/SnO2/CH3NH3SnI3/CuInS2/Au, has been found to exhibit highest power conversion efficiency of 21.79% as compared to other cells. Investigations have also been carried out to analyze the effect of defect density in the absorber layer and the interface of the cell structure. In addition, the cell performance has been ascertained by examining the impact of operating temperature, metal contact work function and that of resistance in series as well as in parallel. The simulation results of our primary cell structure are found to be in good agreement with the recent experimental study.

scholarly journals Optimization of Highly Efficient and Eco-Friendly EA-Substituted Tin Based Perovskite Solar Cell with Different Hole Transport Material

2022 ◽  
Author(s):  
Rashi Chandel ◽  
deepak Punetha ◽  
Divya Dhawan ◽  
Neena Gupta
Keyword(s):  
Solar Cell ◽  
Defect Density ◽  
Research Work ◽  
Perovskite Solar Cell ◽  
Simulation Software ◽  
Hole Transport ◽  
Absorber Layer ◽  
Electricity Production ◽  
Device Structure ◽  
Highly Efficient

Abstract The perovskite absorber layer are considered highly efficient solar cell for low-cost electricity production. In this research work, an EA-substituted tin based perovskite solar cell with different hole transport material (PEDOT: PSS, Cu2O, CuI, CZTSe) have been investigated using device simulation software. The effects of absorber thickness, defect density, operating temperature, J-V characteristics, and Quantum efficiency have been considered to enhance the performance of solar cell. To confirm the feasibility and validate the study, all the simulation results were compared with reported experiment data. According to the experimental work based on (FA0.9EA0.1)0.98EDA0.01SnI3 absorber layer, maximum of 13% efficiency is achieved with PEDOT: PSS as the HTM. Whereas we have further optimized performance parameters and found the superior response (Voc=0.8851 V, Jsc=27.24 mA/cm2, FF=77.91%, and PCE=18.78%) while opted Cu2O as the hole transport material. This device structure FTO/Cu2O/(FA0.9EA0.1)0.98EDA0.01SnI3/IDL/PCBM/C60/Au provides the more efficient, reliable solution for replacing the lead-based perovskite solar cell. This study will aid researcher in a reasonable choice of materials and to predict the behavior of high performance solar cell before undergoing the fabrication process.

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