Theoretical study of vacancy supersaturation during silicon crystal growth and nitrogen-doping effects
2006 ◽
Vol 376-377
◽
pp. 130-132
◽
Keyword(s):
Keyword(s):
2018 ◽
Vol 355
◽
pp. 012005
2012 ◽
Vol 360
◽
pp. 43-46
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2005 ◽
Vol 19
(7)
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pp. 501-515
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