Dilute magnetic semiconductor electrode based all semiconductor magnetic tunnel junction for high-temperature applications

2021 ◽  
pp. 413525
Author(s):  
Gul Faroz A. Malik ◽  
Mubashir A. Kharadi ◽  
Farooq A. Khanday ◽  
Khurshed A. Shah ◽  
Sparsh Mittal ◽  
...  
Keyword(s):  
High Temperature ◽  
Tunnel Junction ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Magnetic Tunnel Junction ◽  
Semiconductor Electrode ◽  
Temperature Applications

High-Temperature Magnetic Tunnel Junction Magnetometers Based on L1$_0$-PtMn Pinned Layer

2020 ◽  
Vol 4 (5) ◽  
pp. 1-4
Author(s):  
Sina Ranjbar ◽  
Muftah Al-Mahdawi ◽  
Mikihiko Oogane ◽  
Yasuo Ando
Keyword(s):  
High Temperature ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction

High-temperature magnetoresistance study of a magnetic tunnel junction

2006 ◽  
Vol 304 (1) ◽  
pp. e297-e299
Author(s):  
D.C. Chen ◽  
Y.D. Yao ◽  
C.M. Chen ◽  
James Hung ◽  
Y.S. Chen ◽  
...  
Keyword(s):  
High Temperature ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction

High-Temperature Ferromagnetism of Hybrid Nanostructure Ag−Zn0.92Co0.08O Dilute Magnetic Semiconductor

2009 ◽  
Vol 113 (9) ◽  
pp. 3581-3585 ◽  
Author(s):  
Tao Yao ◽  
Wensheng Yan ◽  
Zhihu Sun ◽  
Zhiyun Pan ◽  
Bo He ◽  
...  
Keyword(s):  
High Temperature ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Hybrid Nanostructure

High temperature annealing stability of magnetic properties in MgO-based perpendicular magnetic tunnel junction stacks with CoFeB polarizing layer

2011 ◽  
Vol 109 (7) ◽  
pp. 07C709 ◽  
Author(s):  
M. Tofizur Rahman ◽  
Andrew Lyle ◽  
Guohan Hu ◽  
William J. Gallagher ◽  
Jian-ping Wang
Keyword(s):  
Magnetic Properties ◽  
High Temperature ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
High Temperature Annealing

ChemInform Abstract: High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd

ChemInform ◽  
2013 ◽  
Vol 44 (15) ◽  
pp. no-no
Author(s):  
O. Brandt ◽  
S. Dhar ◽  
L. Perez ◽  
V. Sapega
Keyword(s):  
High Temperature ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor

Addressing the Challenges of Using Ferromagnetic Electrodes in Molecular Devices

MRS Advances ◽  
2016 ◽  
Vol 1 (7) ◽  
pp. 483-488
Author(s):  
Pawan Tyagi ◽  
Edward Friebe ◽  
Collin Baker
Keyword(s):  
High Temperature ◽  
Tunnel Junction ◽  
Chemical Bonding ◽  
Chemical Etching ◽  
Magnetic Tunnel Junction ◽  
Device Fabrication ◽  
Molecular Devices ◽  
Molecular Device ◽  
Experimental Development ◽  
Ferromagnetic Electrodes

ABSTRACTFerromagnetic (FM) electrodes chemically anchored with thiol functionalized molecules can yield novel molecular spintronics devices (MSDs). However, significant challenges lie in developing commercially viable MSD fabrication approach utilizing FM electrodes. A practical MSD fabrication approach should consider FM electrodes’ susceptibility to oxidation, chemical etching, and stress induced deformations during fabrication and usage. This paper will discuss NiFe, an alloy used in the present day memory devices and high-temperature engineering applications, as a candidate for FM electrode and for the fabrication of MSDs. Our spectroscopic reflectance studies show that NiFe starts oxidizing aggressively beyond ∼90 ⁰C. The NiFe surfaces, aged for several months or heated for several minutes below ∼90 ⁰C, were suitable for chemical bonding with the thiol-functionalized molecules. NiFe also demonstrated excellent etching resistance in widely used dichloromethane solvent for dissolving molecular device elements. NiFe also reduced the mechanical stress induced deformities in other FM metals like cobalt. This paper also discusses the successful utilization of NiFe electrodes in the magnetic tunnel junction based molecular device fabrication approach. This research is expected to address the knowledge gap blocking the experimental development of FM based MSDs.

Microstructural characterization of a rapidly solidified Al-Fe-V-Si alloy for elevated temperature applications

1988 ◽  
Vol 46 ◽  
pp. 550-551
Author(s):  
R. E. Franck ◽  
J. A. Hawk ◽  
G. J. Shiflet
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Grain Growth ◽  
Volume Fraction ◽  
Microstructural Characterization ◽  
Second Phase ◽  
Microstructural Stability ◽  
Elevated Temperature Strength ◽  
Temperature Applications

Rapid solidification processing (RSP) is one method of producing high strength aluminum alloys for elevated temperature applications. Allied-Signal, Inc. has produced an Al-12.4 Fe-1.2 V-2.3 Si (composition in wt pct) alloy which possesses good microstructural stability up to 425°C. This alloy contains a high volume fraction (37 v/o) of fine nearly spherical, α-Al12(Fe, V)3Si dispersoids. The improved elevated temperature strength and stability of this alloy is due to the slower dispersoid coarsening rate of the silicide particles. Additionally, the high v/o of second phase particles should inhibit recrystallization and grain growth, and thus reduce any loss in strength due to long term, high temperature annealing.The focus of this research is to investigate microstructural changes induced by long term, high temperature static annealing heat-treatments. Annealing treatments for up to 1000 hours were carried out on this alloy at 500°C, 550°C and 600°C. Particle coarsening and/or recrystallization and grain growth would be accelerated in these temperature regimes.

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