Tuning of the defect mode in a 1D superconductor-semiconductor crystal with hydrostatic pressure dependent frequency of the transverse optical phonons

2019 ◽  
Vol 556 ◽  
pp. 7-13 ◽  
Author(s):  
Francis Segovia-Chaves ◽  
Herbert Vinck-Posada
Keyword(s):  
Hydrostatic Pressure ◽  
Defect Mode ◽  
Transverse Optical ◽  
Optical Phonons ◽  
Semiconductor Crystal ◽  
Dependent Frequency

Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β-Ga2O3 substrate and homoepitaxial film

2021 ◽  
Vol 118 (25) ◽  
pp. 252101
Author(s):  
Takeyoshi Onuma ◽  
Kohei Sasaki ◽  
Tomohiro Yamaguchi ◽  
Tohru Honda ◽  
Akito Kuramata ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Free Charge Carrier ◽  
Transverse Optical ◽  
Optical Phonons ◽  
Free Charge ◽  
Homoepitaxial Film

scholarly journals Non-equilibrium longitudinal and transverse optical phonons in terahertz quantum cascade lasers

2012 ◽  
Vol 100 (9) ◽  
pp. 091101 ◽  
Author(s):  
Miriam S. Vitiello ◽  
Rita C. Iotti ◽  
Fausto Rossi ◽  
Lukas Mahler ◽  
Alessandro Tredicucci ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Transverse Optical ◽  
Optical Phonons ◽  
Quantum Cascade ◽  
Cascade Lasers ◽  
Non Equilibrium

Optical Phonons in Cubic AlxGa1-xM Approached by the Modified Random Element Isodisplacement Model

1998 ◽  
Vol 12 (11) ◽  
pp. 443-449 ◽  
Author(s):  
Ming S. Liu ◽  
L. A. Bursill ◽  
S. Prawer
Keyword(s):  
Nearest Neighbor ◽  
Phonon Frequency ◽  
Random Element ◽  
Transverse Optical ◽  
Optical Phonons ◽  
Mode Behavior

The behavior of longitudinal and transverse optical phonons in cubic Al x Ga 1-x N are derived theoretically as a function of the concentration x(0≤x≤1). The calculation is based on a Modified Random Element Isodisplacement model which considers the interactions from the nearest neighbor and second neighbor atoms. We find one-mode behavior in Al x Ga 1-x N where the phonon frequency in general varies continuously and approximately linearly with x.

Raman Study of Strain and Confinement Effects in Si/Ge Strained Layer Superlattices Under Hydrostatic Pressure

1991 ◽  
Vol 220 ◽  
Author(s):  
Zhifeng Sui ◽  
Irving P. Herman ◽  
Joze Bevk
Keyword(s):  
Hydrostatic Pressure ◽  
Raman Scattering ◽  
Optical Phonon ◽  
Phonon Frequency ◽  
Optical Phonons ◽  
Biaxial Strain ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Raman Study ◽  
Strained Layer Superlattices

ABSTRACTThe effects of strain and confinement on optical phonons in a Si12Ge4 strained layer superlattice grown by MBE on c-Si (001) were studied as a function of hydrostatic pressure (T = 295 K) using Raman scattering. The change of phonon frequency with pressure, dω/dP, for the principal quasi-confined LO mode in the Ge layers is found to be significantly smaller than that for bulk crystalline Ge because the magnitude of biaxial strain decreases in the Ge layers with added pressure and because the Grüneisen parameter of the confined mode is smaller than that of the Γ-point optical phonon. More generally, it is noted that the magnitude of biaxial strain in many strained layer superlattices initially decreases with the application of hydrostatic pressure, making the structures more stable.

Confined transverse-optical phonons in ultrathin CdTe/ZnTe superlattices

1993 ◽  
Vol 47 (4) ◽  
pp. 1998-2002 ◽  
Author(s):  
T. Fromherz ◽  
F. Hauzenberger ◽  
W. Faschinger ◽  
M. Helm ◽  
P. Juza ◽  
...  
Keyword(s):  
Transverse Optical ◽  
Optical Phonons
Sign in / Sign up

Export Citation Format

Share Document