Superconducting properties of YBCO thin films grown on [001] quartz substrates by pulsed laser deposition

2019 ◽  
Vol 562 ◽  
pp. 20-24 ◽  
Author(s):  
N.V. Porokhov ◽  
E.E. Levin ◽  
M.L. Chukharkin ◽  
A.S. Kalaboukhov ◽  
A.G. Maresov ◽  
...  
2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.


2002 ◽  
Vol 16 (1) ◽  
pp. 105-109 ◽  
Author(s):  
M Li ◽  
B Ma ◽  
R E Koritala ◽  
B L Fisher ◽  
K Venkataraman ◽  
...  

1999 ◽  
Vol 9 (2) ◽  
pp. 2359-2362 ◽  
Author(s):  
B. Schey ◽  
W. Bieel ◽  
M. Kuhn ◽  
B. Stritzker

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).


1997 ◽  
Vol 19 (8-9) ◽  
pp. 1033-1039 ◽  
Author(s):  
L. Ceresara ◽  
F. Fuso ◽  
E. Arimondo ◽  
P. Scardi

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1224
Author(s):  
Yukiko Obata ◽  
Igor A. Karateev ◽  
Ivan Pavlov ◽  
Alexander L. Vasiliev ◽  
Silvia Haindl

Anti-PbO-type FeSe shows an advantageous dependence of its superconducting properties with mechanical strain, which could be utilized as future sensor functionality. Although superconducting FeSe thin films can be grown by various methods, ultrathin films needed in potential sensor applications were only achieved on a few occasions. In pulsed laser deposition, the main challenges can be attributed to such factors as controlling film stoichiometry (i.e., volatile elements during the growth), nucleation, and bonding to the substrate (i.e., film/substrate interface control) and preventing the deterioration of superconducting properties (i.e., by surface oxidization). In the present study, we address various technical issues in thin film growth of FeSe by pulsed laser deposition, which pose constraints in engineering and reduce the application potential for FeSe thin films in sensor devices. The results indicate the need for sophisticated engineering protocols that include interface control and surface protection from chemical deterioration. This work provides important actual limitations for pulsed laser deposition (PLD) of FeSe thin films with the thicknesses below 30 nm.


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