Towards spectroscopy of a few silicon nanocrystals embedded in silica

2009 ◽  
Vol 41 (6) ◽  
pp. 998-1001 ◽  
Author(s):  
M. Grün ◽  
P. Miska ◽  
E. Neu ◽  
D. Steinmetz ◽  
F. Montaigne ◽  
...  
Keyword(s):  
Silicon Nanocrystals

Photoluminescence behavior of silicon nanocrystals: Role of surface chemistry and size

2008 ◽  
Author(s):  
Anoop Gupta ◽  
Folarin Erogbogbo ◽  
Mark T. Swihart ◽  
Hartmut Wiggers
Keyword(s):  
Surface Chemistry ◽  
Silicon Nanocrystals ◽  
Photoluminescence Behavior

Pump-Probe Measurements Using Silicon Nanocrystal Waveguides

2003 ◽  
Vol 770 ◽  
Author(s):  
Nathanael Smith ◽  
Max J. Lederer ◽  
Marek Samoc ◽  
Barry Luther-Davies ◽  
Robert G. Elliman
Keyword(s):  
Probe Beam ◽  
Time Resolution ◽  
Pump Beam ◽  
Silicon Nanocrystals ◽  
Continuous Wave ◽  
Optical Gain ◽  
Optical Pump ◽  
Time Resolved ◽  
Pump Probe ◽  
Probe Measurements

AbstractOptical pump-probe measurements were performed on planar slab waveguides containing silicon nanocrystals in an attempt to measure optical gain from photo-excited silicon nanocrystals. Two experiments were performed, one with a continuous-wave probe beam and a pulsed pump beam, giving a time resolution of approximately 25 ns, and the other with a pulsed pump and probe beam, giving a time resolution of approximately 10 ps. In both cases the intensity of the probe beam was found to be attenuated by the pump beam, with the attenuation increasing monotonically with increasing pump power. Time-resolved measurements using the first experimental arrangement showed that the probe signal recovered its initial intensity on a time scale of 45-70 μs, a value comparable to the exciton lifetime in Si nanocrystals. These data are shown to be consistent with an induced absorption process such as confined carrier absorption. No evidence for optical gain was observed.

scholarly journals Silicon Nanocrystals as Signal Transducers in Ionophore-Based Fluorescent Nanosensors

2020 ◽  
pp. 129350
Author(s):  
Mark S. Ferris ◽  
Ashley P. Chesney ◽  
Bradley J. Ryan ◽  
Utkarsh Ramesh ◽  
Matthew G. Panthani ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Signal Transducers

How far will silicon nanocrystals push the scaling limits of NVMs technologies?

2004 ◽  
Author(s):  
B. De Salvo ◽  
C. Gerardi ◽  
S. Lombardo ◽  
T. Baron ◽  
L. Perniola ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Scaling Limits

scholarly journals Multiple Exciton Generation in Isolated and Interacting Silicon Nanocrystals

Nanoscale ◽  
2021 ◽  
Author(s):  
Ivan Marri ◽  
Stefano Ossicini
Keyword(s):  
Renewable Energy ◽  
Solar Cell ◽  
Silicon Nanocrystals ◽  
Photovoltaic Systems ◽  
Multiple Exciton Generation ◽  
Important Challenge ◽  
Low Dimensional ◽  
Low Dimensional Materials

An important challenge in the field of renewable energy is the development of novel nanostructured solar cell devices which implement low-dimensional materials to overcome the limits of traditional photovoltaic systems....

Trap-State-Induced Becquerel Type of Photoluminescence Decay in DPA-Activated Silicon Nanocrystals

2021 ◽  
Vol 125 (3) ◽  
pp. 2055-2063
Author(s):  
K. Kůsová ◽  
T. Popelář ◽  
I. Pelant ◽  
G. Morselli ◽  
S. Angeloni ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Trap State ◽  
Photoluminescence Decay

scholarly journals Electronic Structure Engineering Achieved via Organic Ligands in Silicon Nanocrystals

2020 ◽  
Vol 32 (15) ◽  
pp. 6326-6337 ◽  
Author(s):  
Kateřina Dohnalová ◽  
Prokop Hapala ◽  
Kateřina Kůsová ◽  
Ivan Infante
Keyword(s):  
Electronic Structure ◽  
Silicon Nanocrystals ◽  
Organic Ligands ◽  
Structure Engineering

Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

2005 ◽  
Vol 23 ◽  
pp. 43-46
Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Laser Wavelength ◽  
Interconnected Network ◽  
Substrate Type ◽  
Argon Ion Laser ◽  
Si Nanocrystals ◽  
Ion Laser ◽  
Laser Induced Etching ◽  
Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

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