Fabrication and electrical characterization of Schottky diode based on 2-amino-4, 5-imidazoledicarbonitrile (AIDCN)

2009 ◽  
Vol 41 (10) ◽  
pp. 1832-1834 ◽  
Author(s):  
R.K. Gupta ◽  
K. Ghosh ◽  
P.K. Kahol
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization

The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

2013 ◽  
Vol 415 ◽  
pp. 77-81 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Dil Nawaz Khan ◽  
Fakhra Aziz
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode

2015 ◽  
Vol 61 ◽  
pp. 463-468 ◽  
Author(s):  
İ. Orak ◽  
K. Ejderha ◽  
E. Sönmez ◽  
M. Alanyalıoğlu ◽  
A. Turut
Keyword(s):  
Schottky Diode ◽  
Annealing Temperature ◽  
Electrical Characterization

Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current–voltage and capacitance–voltage methods

2007 ◽  
Vol 387 (1-2) ◽  
pp. 239-244 ◽  
Author(s):  
Mehmet Enver Aydin ◽  
Fahrettin Yakuphanoglu ◽  
Jae-Hoon Eom ◽  
Do-Hoon Hwang
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Capacitance Voltage

scholarly journals Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode

2014 ◽  
Vol 806 ◽  
pp. 117-120 ◽  
Author(s):  
Pierre Brosselard ◽  
Florian Chevalier ◽  
Benjamin Proux ◽  
Nicolas Thierry-Jebali ◽  
Pascal Bevilacqua ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diode ◽  
Electrical Characterization ◽  
Temperature Behavior ◽  
Active Area ◽  
Electrical Characteristics ◽  
Edge Termination ◽  
Bipolar Conduction

This work reports on the fabrication and electrical characterization of 3 different diodes. The first one is a Schottky diode with a single 50 mm P+ ring between the edge termination and the active area. The two other diodes are JBS with a 3 mm P+ strips separated by 4 mm and 8 mm respectively. The breakdown voltage ranges from 2.7kV up to 3.7kV depending on the P+/N area. The 3 different diodes exhibit a similar on-resistance versus the temperature behavior. Moreover, no contribution of the bipolar conduction is observed and no degradation has been observed when a forward stress is performed in forward mode and also in reverse.

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