Electrical Characterization of Interface States in In/p-Si Schottky Diode From I–V Characteristics

2014 ◽  
pp. 85-87 ◽  
Author(s):  
B P Modi ◽  
J M Dhimmar
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Interface States

The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

2013 ◽  
Vol 415 ◽  
pp. 77-81 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Dil Nawaz Khan ◽  
Fakhra Aziz
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Electrical characterization of Au/ZnO thin film Schottky diode on silicon substrate

2016 ◽  
Vol 8 ◽  
pp. 66-68 ◽  
Author(s):  
Lintu Rajan ◽  
C. Periasamy ◽  
Vineet Sahula
Keyword(s):  
Thin Film ◽  
Schottky Diode ◽  
Silicon Substrate ◽  
Electrical Characterization ◽  
Zno Thin Film

The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode

2015 ◽  
Vol 61 ◽  
pp. 463-468 ◽  
Author(s):  
İ. Orak ◽  
K. Ejderha ◽  
E. Sönmez ◽  
M. Alanyalıoğlu ◽  
A. Turut
Keyword(s):  
Schottky Diode ◽  
Annealing Temperature ◽  
Electrical Characterization

Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current–voltage and capacitance–voltage methods

2007 ◽  
Vol 387 (1-2) ◽  
pp. 239-244 ◽  
Author(s):  
Mehmet Enver Aydin ◽  
Fahrettin Yakuphanoglu ◽  
Jae-Hoon Eom ◽  
Do-Hoon Hwang
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Capacitance Voltage

The electrical properties of La2CuO4/ZnO heterocontacts at different relative humidities

1995 ◽  
Vol 10 (9) ◽  
pp. 2286-2294 ◽  
Author(s):  
Enrico Traversa ◽  
Andrea Bearzotti ◽  
Masaru Miyayama ◽  
Hiroaki Yanagida
Keyword(s):  
Electrical Properties ◽  
Electrochemical Impedance ◽  
Relaxation Times ◽  
Electrical Characterization ◽  
Fast Response ◽  
Interface States ◽  
Water Molecules ◽  
Physisorbed Water ◽  
Eis Measurements

The humidity-sensing electrical properties of heterocontacts betweenp-type La2CuO4andn-type ZnO semiconductors, and of the single oxides, as a comparison, were studied. The heterocontacts was prepared by mechanically pressing sintered disks of the two oxides. The electrical characterization of the heterocontacts was carried out using dc and ac measurements at various relative humidity (RH) values, in order to evaluate the sensing mechanisms and the electrical properties of thesep-njunctions. Their humidity sensitivity was explained in terms of the variation of the barrier height at thep-njunctions, due to the saturation of the original interface states by physisorbed water, which leads to the release of trapped electrons, resulting in an increase in the forward current. The higher the number of interface states, the higher the RH-sensitivity of the heterocontacts. Electrochemical impedance spectroscopy (EIS) measurements showed, at 90% RH, a distribution of capacitances with different relaxation times, which may be caused by the electrolysis of water molecules atp-njunction sites. For their use as humidity sensors, they showed a response of 4 orders of magnitude in the whole RH range tested, and a fast response time. The response of the heterocontacts was bias-dependent, tunable by externally applied electric field. They also have stand-by capability and a self-cleaning mechanism, which allow them to be described as intelligent materials.

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