scholarly journals Unconventional gate voltage dependence of the charge conductance caused by spin-splitting Fermi surface by Rashba-type spin-orbit coupling

2019 ◽  
Vol 114 ◽  
pp. 113615
Author(s):  
Daisuke Oshima ◽  
Katsuhisa Taguchi ◽  
Yukio Tanaka
Keyword(s):  
Fermi Surface ◽  
Gate Voltage ◽  
Voltage Dependence ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Gate Voltage Dependence

scholarly journals Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor

2021 ◽  
Vol 7 (5) ◽  
pp. eabe2892
Author(s):  
Dmitry Shcherbakov ◽  
Petr Stepanov ◽  
Shahriar Memaran ◽  
Yaxian Wang ◽  
Yan Xin ◽  
...  
Keyword(s):  
Electric Field ◽  
High Mobility ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Quantum Oscillations ◽  
Out Of Plane ◽  
Order Of Magnitude ◽  
Spin Degeneracy

Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic, and topological phenomena and applications. In bulk materials, SOC strength is a constant. Here, we demonstrate SOC and intrinsic spin splitting in atomically thin InSe, which can be modified over a broad range. From quantum oscillations, we establish that the SOC parameter α is thickness dependent; it can be continuously modulated by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Unexpectedly, α could be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.

scholarly journals Absence of the Rashba Splitting of Au(111) Surface Bands

2018 ◽  
Vol 2018 ◽  
pp. 1-5
Author(s):  
I. N. Yakovkin
Keyword(s):  
Electronic Structure ◽  
Dft Calculations ◽  
Surface States ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Inversion Symmetry ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Relativistic Approximation ◽  
Photoemission Experiment

The electronic structure of Au(111) films is studied by means of relativistic DFT calculations. It is found that the twinning of the surface bands, observed in photoemission experiment, does not necessarily correspond to the spin-splitting of the surface states caused by the break of the inversion symmetry at the surface. The twinning of the bands of clean Au(111) films can be obtained within nonrelativistic or scalar-relativistic approximation, so that it is not a result of spin-orbit coupling. However, the spin-orbit coupling does not lead to the spin-splitting of the surface bands. This result is explained by Kramers’ degeneracy, which means that the existence of a surface itself does not destroy the inversion symmetry of the system. The inversion symmetry of the Au(111) film can be broken, for example, by means of adsorption, and a hydrogen monolayer deposited on one face of the film indeed leads to the appearance of the spin-splitting of the bands.

Spin-Orbit Coupling and Zero-Field Electron Spin Splitting in AlGaN/AlN/GaN Heterostructures with a Polarization Induced Two-Dimensional Electron Gas

2006 ◽  
Vol 955 ◽  
Author(s):  
Ç. Kurdak ◽  
N. Biyikli ◽  
H. Cheng ◽  
U. Ozgur ◽  
H. Morkoç ◽  
...  
Keyword(s):  
Electron Spin ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Zero Field ◽  
Material System ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Weak Antilocalization ◽  
High Carrier ◽  
Dimensional Electron Gas

ABSTRACTWe studied spin-orbit coupling in wurtzite AlxGa1−xN/AlN/GaN heterostructures with different Al concentrations using weak antilocalization measurements at 1.6 K. Using the persistent photoconductivity effect we change the carrier density in controllable manner. We find that the electron spin splitting energies does not scale linearly with the Fermi wavevector at high carrier densities. From this deviation, for the first time, we are able to extract the cubic spin-orbit parameter for this material system.

Fermi Surface Properties and Antisymmetric Spin–Orbit Coupling in Noncentrosymmetric CeCoSi3

2011 ◽  
Vol 80 (8) ◽  
pp. 083701 ◽  
Author(s):  
Hiroki Iida ◽  
Yuka Kadota ◽  
Mayuko Kogure ◽  
Tetsuya Sugawara ◽  
Haruyoshi Aoki ◽  
...  
Keyword(s):  
Fermi Surface ◽  
Surface Properties ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit

Effect of Hetero-Interfaces on Rashba Spin-Orbit Coupling in a Gated In0.53Ga0.47As/InP Quantum Well Structure

2011 ◽  
Vol 415-417 ◽  
pp. 1988-1991
Author(s):  
Yuan Ming Zhou
Keyword(s):  
Quantum Well ◽  
Gate Voltage ◽  
Coupling Parameter ◽  
Potential Profile ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Layers ◽  
Quantum Well Structure ◽  
Rashba Spin

We investigate the values of the Rashba spin-orbit coupling parameter α in a gated In0.53Ga0.47As/InP quantum well structure using the k•p formalism. With more positive gate voltage applied, the quantum well potential profile becomes more symmetric and the value of α decreases. The theoretical values of α are much smaller than experimental ones. The discrepancy can be reasonably explained by the neglect of the interface contribution in the k•p formalism and the formation of additional InAsxP1-xand GaxIn1-xAsyP1-yinterfacial layers in our sample.

scholarly journals Ultrathin two-dimensional superconductivity with strong spin–orbit coupling

2016 ◽  
Vol 113 (38) ◽  
pp. 10513-10517 ◽  
Author(s):  
Hyoungdo Nam ◽  
Hua Chen ◽  
Tijiang Liu ◽  
Jisun Kim ◽  
Chendong Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Scanning Tunneling Spectroscopy ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Scanning Tunneling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Critical Magnetic Fields ◽  
Strong Spin

We report on a study of epitaxially grown ultrathin Pb films that are only a few atoms thick and have parallel critical magnetic fields much higher than the expected limit set by the interaction of electron spins with a magnetic field, that is, the Clogston–Chandrasekhar limit. The epitaxial thin films are classified as dirty-limit superconductors because their mean-free paths, which are limited by surface scattering, are smaller than their superconducting coherence lengths. The uniformity of superconductivity in these thin films is established by comparing scanning tunneling spectroscopy, scanning superconducting quantum interference device (SQUID) magnetometry, double-coil mutual inductance, and magneto-transport, data that provide average superfluid rigidity on length scales covering the range from microscopic to macroscopic. We argue that the survival of superconductivity at Zeeman energies much larger than the superconducting gap can be understood only as the consequence of strong spin–orbit coupling that, together with substrate-induced inversion-symmetry breaking, produces spin splitting in the normal-state energy bands that is much larger than the superconductor’s energy gap.

scholarly journals Study of Rashba spin splitting and intersubband spin-orbit coupling effect in AlGaN/GaN quantum wells

2012 ◽  
Vol 61 (2) ◽  
pp. 027103
Author(s):  
Li Ming ◽  
Zhang Rong ◽  
Liu Bin ◽  
Fu De-Yi ◽  
Zhao Chuan-Zhen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Coupling Effect ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin ◽  
Rashba Spin Splitting
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