Influence of oxygen concentration on the sooting behavior of ethanol droplet flames in microgravity conditions

2007 ◽  
Vol 31 (2) ◽  
pp. 2165-2173 ◽  
Author(s):  
Ahmet Yozgatligil ◽  
Seul-Hyun Park ◽  
Mun Young Choi ◽  
Andrei Kazakov ◽  
Frederick L. Dryer
Keyword(s):  
Oxygen Concentration ◽  
Ethanol Droplet ◽  
Microgravity Conditions

New Observations of Isolated Ethanol Droplet Flames in Microgravity Conditions

2008 ◽  
Vol 180 (4) ◽  
pp. 631-651 ◽  
Author(s):  
Seul-Hyun Park ◽  
Seuk-Cheun Choi ◽  
Mun Young Choi ◽  
Ahmet Yozgatligil
Keyword(s):  
Ethanol Droplet ◽  
Microgravity Conditions

Sooting behavior of ethanol droplet combustion at elevated pressures under microgravity conditions

2004 ◽  
Vol 15 (3) ◽  
pp. 12-18 ◽  
Author(s):  
Bradley D. Urban ◽  
Kenneth Kroenlein ◽  
Andrei Kazakov ◽  
Frederick L. Dryer ◽  
Ahmet Yozgatligil ◽  
...  
Keyword(s):  
Droplet Combustion ◽  
Elevated Pressures ◽  
Ethanol Droplet ◽  
Microgravity Conditions

BURNING AND SOOTING BEHAVIOR OF ETHANOL DROPLET COMBUSTION UNDER MICROGRAVITY CONDITIONS

2004 ◽  
Vol 176 (11) ◽  
pp. 1985-1999 ◽  
Author(s):  
AHMET YOZGATLIGIL ◽  
SEUL-HYUN PARK ◽  
MUN YOUNG CHOI ◽  
ANDREI KAZAKOV ◽  
FREDERICK L. DRYER
Keyword(s):  
Droplet Combustion ◽  
Ethanol Droplet ◽  
Microgravity Conditions

Detailed modeling of an isolated, ethanol droplet combustion under microgravity conditions

2003 ◽  
Vol 134 (4) ◽  
pp. 301-314 ◽  
Author(s):  
Andrei Kazakov ◽  
Jordan Conley ◽  
Frederick L. Dryer
Keyword(s):  
Droplet Combustion ◽  
Ethanol Droplet ◽  
Microgravity Conditions

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

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