High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Cross-Sectional Transmission Electron Microscopy of Si-Based Nanostructures

1996 ◽  
Vol 441 ◽  
Author(s):  
Maxim V. Sidorov ◽  
David J. Smith
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Cross Sectional ◽  
Transmission Electron ◽  
High Resolution Tem

AbstractThis work demonstrates the successful application of the precision cross-sectioning technique to the characterization of two types of Si-based nanostructures. Careful wedge-polishing of an array of metal-coated poly-Si microlines gave electron transparency over areas as broad as 1.5 mm across. A single, specific, SET (Single Electron Transistor), having dimensions of 4 × 4 μm2, was cross-sectioned for examination using conventional and high-resolution TEM imaging.

An Electron Microscopic Characterization of Mbe-Grown ZnSe/CaAs and ZnSe/Ge Heterointerfaces

1990 ◽  
Vol 198 ◽  
Author(s):  
S.B. Sant ◽  
R.W. Smith ◽  
G.C. Weatherly
Keyword(s):  
Molecular Beam ◽  
Nucleation And Growth ◽  
Epitaxial Films ◽  
Defect Characterization ◽  
Initial Growth ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTMolecular beam epitaxy (MBE) grown ZnSe/GaAs and ZnSe/Ge heterointerfaces have been studied by transmission electron microscopy (TEM). Defect characterization of cross-sectional and planar specimens showed that ZnSe epitaxial films contain numerous twins that predominantly arise at the interface. Planar specimens of ZnSe/Ge were in-situ TEM annealed, for 5.5 hours at 873K. The twins are thermally very stable which would indicate that they arise during the growth process. The occurrence of these twins in the ZnSe film is explained by nucleation and growth of normal and twinned nuclei. Some of the ZnSe films grown on (10O)Ge substrates have low-angle boundaries indicating that the initial growth of the film is by the formation of islands.

Transmission Electron Microscopy Studies of Aluminum Oxidation

1985 ◽  
Vol 43 ◽  
pp. 268-269
Author(s):  
J.Y. Lee
Keyword(s):  
Nucleation And Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Polycrystalline Aluminum ◽  
Axis Orientation ◽  
Temperature Oxidation ◽  
Aluminum Oxidation ◽  
Transmission Electron ◽  
High Resolution Images ◽  
Argon Ion

In the oxidation of metals and alloys, microstructural features at the atomic level play an important role in the nucleation and growth of the oxide, but little is known about the atomic mechanisms of high temperature oxidation. The present paper describes current progress on crystallographic aspects of aluminum oxidation. The 99.999% pure, polycrystalline aluminum was chemically polished and oxidized in 1 atm air at either 550°C or 600°C for times from 0.5 hr to 4 weeks. Cross-sectional specimens were prepared by forming a sandwich with epoxy, followed by mechanical polishing and then argon ion milling. High resolution images were recorded in a <110>oxide zone-axis orientation with a JE0L JEM 200CX microscope operated at 200 keV.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

A Working Method for Adapting the (SEM) Scanning Electron Microscope to Produce (STEM) Scanning Transmission Electron Microscope Images

2002 ◽  
Author(s):  
Edward Coyne
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Theoretical Idea ◽  
Cross Sectional ◽  
Additional Advantage ◽  
Transmission Electron ◽  
Resolution Element ◽  
Scanning Electron

Abstract This paper describes the problems encountered and solutions found to the practical objective of developing an imaging technique that would produce a more detailed analysis of IC material structures then a scanning electron microscope. To find a solution to this objective the theoretical idea of converting a standard SEM to produce a STEM image was developed. This solution would enable high magnification, material contrasting, detailed cross sectional analysis of integrated circuits with an ordinary SEM. This would provide a practical and cost effective alternative to Transmission Electron Microscopy (TEM), where the higher TEM accelerating voltages would ultimately yield a more detailed cross sectional image. An additional advantage, developed subsequent to STEM imaging was the use of EDX analysis to perform high-resolution element identification of IC cross sections. High-resolution element identification when used in conjunction with high-resolution STEM images provides an analysis technique that exceeds the capabilities of conventional SEM imaging.

scholarly journals High Resolution Transmission Electron Microscopy of Metallic Film/Laser-Irradiated Alumina Couples.

1994 ◽  
Vol 357 ◽  
Author(s):  
A. J. Pedraza ◽  
Siqi Cao ◽  
L. F. Allard ◽  
D. H. Lowndes
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Copper Film ◽  
Interfacial Structure ◽  
Diffuse Interface ◽  
Cross Sectional ◽  
Polycrystalline Alumina ◽  
Near Surface ◽  
Transmission Electron

AbstractA near-surface thin layer is melted when single crystal alumina (sapphire) is pulsed laserirradiated in an Ar-4%H2 atmosphere. γ-alumina grows epitaxially from the (0001) face of axalumina (sapphire) during the rapid solidification of this layer that occurs once the laser pulse is over. Cross sectional high resolution transmission electron microscopy (HRTEM) reveals that the interface between unmelted sapphire and γ-alumina is atomistically flat with steps of one to a few close-packed oxygen layers; however, pronounced lattice distortions exist in the resolidified γ-alumina. HRTEM also is used to study the metal-ceramic interface of a copper film deposited on a laser-irradiated alumina substrate. The observed changes of the interfacial structure relative to that of unexposed substrates are correlated with the strong enhancement of film-substrate bonding promoted by laser irradiation. HRTEM shows that a thin amorphous film is produced after irradiation of 99.6% polycrystalline alumina. Formation of a diffuse interface and atomic rearrangements that can take place in metastable phases contribute to enhance the bonding strength of copper to laser-irradiated alumina.

High-resolution transmission electron microscopic investigations of molybdenum thin films on faceted α-Al2O3

2005 ◽  
Vol 38 (2) ◽  
pp. 260-265 ◽  
Author(s):  
Leonore Wiehl ◽  
Jens Oster ◽  
Michael Huth
Keyword(s):  
High Resolution ◽  
Three Dimensional ◽  
Epitaxial Relationship ◽  
Electron Microscopic ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Resolution Images ◽  
Α Al2o3 ◽  
Relationship Of

Epitaxially grown Mo films on a faceted corundum (α-Al2O3)mplane were investigated by transmission electron microscopy. Low- and high-resolution images were taken from a cross-section specimen cut perpendicular to the facets. It was possible to identify unambiguously the crystallographic orientation of these facets and explain the considerable deviation (∼10°) of the experimental interfacet angle, as measured with atomic force microscopy (AFM), from the expected value. For the first time, proof is given for a smooth \{10\bar{1}1\} facet and a curvy facet with orientation near to \{10\bar{1}\bar{2}\}. Moreover, the three-dimensional epitaxial relationship of an Mo film on a faceted corundummsurface was determined.

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