scholarly journals Theoretical design of a triple-band perfect metamaterial absorber in the THz frequency range

2019 ◽  
Vol 14 ◽  
pp. 102463 ◽  
Author(s):  
Chunlian Cen ◽  
Zao Yi ◽  
Guangfu Zhang ◽  
Yubin Zhang ◽  
Cuiping Liang ◽  
...  
2021 ◽  
Vol 23 ◽  
pp. 104037
Author(s):  
Miao Pan ◽  
Huazhu Huang ◽  
Baodian Fan ◽  
Wenzhi Chen ◽  
Shuai Li ◽  
...  

2020 ◽  
Vol 16 ◽  
pp. 102951 ◽  
Author(s):  
Yingying Wang ◽  
Zeqiang Chen ◽  
Danyang Xu ◽  
Zao Yi ◽  
Xifang Chen ◽  
...  

2017 ◽  
Vol 31 (15) ◽  
pp. 1750176 ◽  
Author(s):  
O. Akgol ◽  
M. Karaaslan ◽  
E. Unal ◽  
C. Sabah

Perfect metamaterial absorber (MA)-based sensor applications are presented and investigated in the microwave frequency range. It is also experimentally analyzed and tested to verify the behavior of the MA. Suggested perfect MA-based sensor has a simple configuration which introduces flexibility to sense the dielectric properties of a material and the pressure of the medium. The investigated applications include pressure and density sensing. Besides, numerical simulations verify that the suggested sensor achieves good sensing capabilities for both applications. The proposed perfect MA-based sensor variations enable many potential applications in medical or food technologies.


2019 ◽  
Vol 13 ◽  
pp. 102149 ◽  
Author(s):  
Zao Yi ◽  
Hang Lin ◽  
Gao Niu ◽  
Xifang Chen ◽  
Zigang Zhou ◽  
...  

Nanophotonics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 1337-1346
Author(s):  
Jin Tao ◽  
Zhongzhu Liang ◽  
Guang Zeng ◽  
Dejia Meng ◽  
David R. Smith ◽  
...  

Abstract Cointegration and coupling a perfect metamaterial absorber (PMA) together with a film bulk acoustic wave resonator (FBAR) in a monolithic fashion is introduced for the purpose of producing ultracompact uncooled infrared sensors of high sensitivity. An optimized ultrathin multilayer stack was implemented to realize the proposed device. It is experimentally demonstrated that the resonance frequency of the FBAR can be used efficiently as a sensor output as it downshifts linearly with the intensity of the incident infrared irradiation. The resulting sensor also achieves a high absorption of 88% for an infrared spectrum centered at a wavelength of 8.2 μm. The structure is compact and can be easily integrated on a CMOS-compatible chip since both the FBAR and PMA utilize and share the same stack of metal and dielectric layers.


2015 ◽  
Vol 117 (18) ◽  
pp. 184503 ◽  
Author(s):  
Baoqin Lin ◽  
Shanghong Zhao ◽  
Xinyu Da ◽  
Yingwu Fang ◽  
Jiajun Ma ◽  
...  

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