scholarly journals Tunable quad-band perfect metamaterial absorber on the basis of monolayer graphene pattern and its sensing application

2021 ◽  
pp. 104447
Author(s):  
Jinping Tian ◽  
Rujiao Ke ◽  
Rongcao Yang ◽  
Weihua Pei
2020 ◽  
Vol 34 (18) ◽  
pp. 2050207 ◽  
Author(s):  
Haijun Zou ◽  
Yongzhi Cheng

We present a three-dimensional (3D) perfect metamaterial absorber (PMA) for temperature sensing application in terahertz region. The PMA consists of a 3D metal resonator structure array and a continuous metal film separated by an indium antimonide (InSb) layer. The numerical simulations demonstrate that the PMA can achieve perfect absorption (about 99.9%) with the high [Formula: see text]-factor of about 18.8 at 2.323 THz when the temperature is 300 K (room temperature). Further simulation results indicate that this terahertz PMA is polarization-insensitive and wide-angle for both transverse electric (TE) and transverse magnetic (TM) waves. The electric field and surface current distributions of the unit-cell structure indicate that the perfect absorption is originated from the excitation of the fundamental magnetic and electric dipole resonance mode. Since the permittivity of the InSb is sensitive to the external temperature, the resonance absorption frequency of the PMA can be dynamically adjusted. The temperature sensitivity of the PMA is about 15.24 GHz/K, which may have potential prospects in temperature sensing and detection.


2021 ◽  
Vol 23 ◽  
pp. 104037
Author(s):  
Miao Pan ◽  
Huazhu Huang ◽  
Baodian Fan ◽  
Wenzhi Chen ◽  
Shuai Li ◽  
...  

Nanophotonics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 1337-1346
Author(s):  
Jin Tao ◽  
Zhongzhu Liang ◽  
Guang Zeng ◽  
Dejia Meng ◽  
David R. Smith ◽  
...  

Abstract Cointegration and coupling a perfect metamaterial absorber (PMA) together with a film bulk acoustic wave resonator (FBAR) in a monolithic fashion is introduced for the purpose of producing ultracompact uncooled infrared sensors of high sensitivity. An optimized ultrathin multilayer stack was implemented to realize the proposed device. It is experimentally demonstrated that the resonance frequency of the FBAR can be used efficiently as a sensor output as it downshifts linearly with the intensity of the incident infrared irradiation. The resulting sensor also achieves a high absorption of 88% for an infrared spectrum centered at a wavelength of 8.2 μm. The structure is compact and can be easily integrated on a CMOS-compatible chip since both the FBAR and PMA utilize and share the same stack of metal and dielectric layers.


2016 ◽  
Vol 24 (2) ◽  
pp. 1518 ◽  
Author(s):  
Gang Yao ◽  
Furi Ling ◽  
Jin Yue ◽  
Chunya Luo ◽  
Jie Ji ◽  
...  

2019 ◽  
Vol 15 ◽  
pp. 102760 ◽  
Author(s):  
Yuyin Li ◽  
Qiqi Chen ◽  
Biao Wu ◽  
Leilei Shi ◽  
Peng Tang ◽  
...  

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