Multi-level phase-change memory with ultralow power consumption and resistance drift

2021 ◽  
Author(s):  
Bin Liu ◽  
Kaiqi Li ◽  
Wanliang Liu ◽  
Jian Zhou ◽  
Liangcai Wu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Phase Change ◽  
Phase Change Memory ◽  
Multi Level ◽  
Ultralow Power ◽  
Change Memory

scholarly journals Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses

Micromachines ◽  
2019 ◽  
Vol 10 (7) ◽  
pp. 461 ◽  
Author(s):  
Chenchen Xie ◽  
Xi Li ◽  
Houpeng Chen ◽  
Yang Li ◽  
Yuanguang Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
Current Source ◽  
Phase Change Memory ◽  
Operation Time ◽  
Access Time ◽  
Fully Differential ◽  
Current Pulses ◽  
Multi Level ◽  
The Impact ◽  
Change Memory

Multi-level cell (MLC) phase change memory (PCM) can not only effectively multiply the memory capacity while maintaining the cell area, but also has infinite potential in the application of the artificial neural network. The write and verify scheme is usually adopted to reduce the impact of device-to-device variability at the expense of a greater operation time and more power consumption. This paper proposes a novel write operation for multi-level cell phase change memory: Programmable ramp-down current pulses are utilized to program the RESET initialized memory cells to the expected resistance levels. In addition, a fully differential read circuit with an optional reference current source is employed to complete the readout operation. Eventually, a 2-bit/cell phase change memory chip is presented with a more efficient write operation of a single current pulse and a read access time of 65 ns. Some experiments are implemented to demonstrate the resistance distribution and the drift.

Ultra-Long Retention and Low Power Consumption of Superlattice-Like Ge50Te50/Ge Thin Films for Phase Change Memory Application

2019 ◽  
Vol 8 (10) ◽  
pp. P563-P566
Author(s):  
Jianhao Zhang ◽  
Yifeng Hu ◽  
Rui Zhang ◽  
Hua Zou ◽  
Jianzhong Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Change Memory

Superlattice-like Ge 8 Sb 92 /Ge thin films for high speed and low power consumption phase change memory application

2014 ◽  
Vol 93 ◽  
pp. 4-7 ◽  
Author(s):  
Yifeng Hu ◽  
Xiaoyi Feng ◽  
Jiwei Zhai ◽  
Ting Wen ◽  
Tianshu Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Change Memory

Multi-Level Phase Change Memory Cells with SiN or Ta2O5Barrier Layers

2012 ◽  
Vol 51 (2S) ◽  
pp. 02BD08 ◽  
Author(s):  
Ashvini Gyanathan ◽  
Yee-Chia Yeo
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Multi Level ◽  
Change Memory
Sign in / Sign up

Export Citation Format

Share Document