Recrystallization-induced void migration in electroplated Cu films

2012 ◽  
Vol 67 (4) ◽  
pp. 312-315 ◽  
Author(s):  
Sunghwan Kim ◽  
Jin Yu
Keyword(s):  
Cu Films ◽  
Void Migration

Precipitation in Al + 4% Cu Epitaxial Films

1968 ◽  
Vol 26 ◽  
pp. 384-385
Author(s):  
S. Herd ◽  
S. M. Mader
Keyword(s):  
Solid Solution ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Detectable Change ◽  
Cu Films ◽  
Solution Treated ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Deposited Films

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.

Some Properties and Structural Features of Poly(Vinyl Chloride)/Cu Films with Copper Nanoparticles Obtained by Exploding Wire Methodu

2020 ◽  
Vol 12 (4) ◽  
pp. 04032-1-04032-5
Author(s):  
V. V. Krivtsov ◽  
◽  
V. V. Kukla ◽  
V. V. Krivtsov ◽  
A. I. Shidlovskiy ◽  
...  
Keyword(s):  
Vinyl Chloride ◽  
Copper Nanoparticles ◽  
Structural Features ◽  
Exploding Wire ◽  
Cu Films ◽  
Poly Vinyl Chloride

Chirality of magnetoelectrodeposited Cu films

2012 ◽  
Vol 48 (2) ◽  
pp. 251-260 ◽  
Keyword(s):  
Cu Films

P‐46: Fabrication and characterization of thick Cu films deposited on G8.5 LCD glass substrates for 8k and large TV panels

2020 ◽  
Vol 51 (1) ◽  
pp. 1519-1522
Author(s):  
Guo Li ◽  
Xia Hui ◽  
Tan Zhiwei ◽  
Xiao Juncheng ◽  
Zhou Hang
Keyword(s):  
Cu Films ◽  
Glass Substrates ◽  
Fabrication And Characterization

Thin Cu films on manganese: aes and photoemission, by synchrotron radiation, investigations

1988 ◽  
Vol 46 (1) ◽  
pp. 111-121 ◽  
Author(s):  
V. Di Castro ◽  
G. Polzonetti ◽  
C. Cozza
Keyword(s):  
Synchrotron Radiation ◽  
Cu Films

scholarly journals Microstructural Effects on the Interfacial Adhesion of Nanometer-Thick Cu Films on Glass Substrates: Implications for Microelectronic Devices

2020 ◽  
Author(s):  
Alice Lassnig ◽  
Velislava L. Terziyska ◽  
Jakub Zalesak ◽  
Tanja Jörg ◽  
Daniel M. Toebbens ◽  
...  
Keyword(s):  
Interfacial Adhesion ◽  
Cu Films ◽  
Glass Substrates ◽  
Microelectronic Devices ◽  
Microstructural Effects

scholarly journals Growth of TiO2/Cu films by HiPIMS for accelerated bacterial loss of viability

2013 ◽  
Vol 232 ◽  
pp. 804-813 ◽  
Author(s):  
Sami Rtimi ◽  
Oualid Baghriche ◽  
Cesar Pulgarin ◽  
Jean-Claude Lavanchy ◽  
John Kiwi
Keyword(s):  
Cu Films

Decomposition of NO2 on metal surfaces: Oxidation of Ag, Zn, and Cu films

1994 ◽  
Vol 12 (4) ◽  
pp. 2140-2144 ◽  
Author(s):  
José A. Rodriguez ◽  
Jan Hrbek
Keyword(s):  
Metal Surfaces ◽  
Cu Films

Copper Electroplating on Zero-Thickness ALD Platinum for Nanoscale Computer Chip Interconnects

2006 ◽  
Vol 914 ◽  
Author(s):  
Alain Kaloyeros ◽  
Yu Zhu ◽  
Kathleen Dunn ◽  
Richard Mayti ◽  
Christopher Miller ◽  
...  
Keyword(s):  
Sessile Drop ◽  
Reverse Current ◽  
Atomic Layer ◽  
Organic Additive ◽  
Constant Current ◽  
Nucleation Density ◽  
Cross Sectional ◽  
Cu Films ◽  
Copper Electroplating ◽  
Seed Layers

AbstractUltra-thin platinum (Pt) films grown by atomic layer deposition (ALD) have been investigated as an alternative to conventional physical vapor deposited (PVD) Cu as seed layer for copper (Cu) electroplating. The wetting angles between the electrolyte and both Pt and Cu seed layers were analyzed using sessile-drop contact-angle analysis prior to plating. Both constant current and pulse reverse current (PRC) were applied to electroplate Cu on both types of blanket seed layers. Scanning electron microscope (SEM) revealed that Cu nucleation density on ALD Pt is lower than on its PVD Cu counterpart, after 30 seconds plating using PRC. Nevertheless, Cu nuclei were observed after only 1.0 minute plating on ALD Pt surfaces, and continuous Cu films were achieved at longer plating times. To fill trench structures coated with ALD Pt/TaN, PRC was applied using the same organic-additive-free electrolyte. Initial results suggest that these seed layers were adequate for ECD fill of trenches with 200 nm feature size and aspect ratio 7:1. The composition and microstructure of the Cu films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD), and cross-sectional transmission electron microscopy (TEM). Thermal stability of the Cu/Pt system was examined by annealing in forming gas at 450°C for 1 hour and subsequent analysis by XRD and TEM.

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