scholarly journals Microstructural Effects on the Interfacial Adhesion of Nanometer-Thick Cu Films on Glass Substrates: Implications for Microelectronic Devices

2020 ◽  
Author(s):  
Alice Lassnig ◽  
Velislava L. Terziyska ◽  
Jakub Zalesak ◽  
Tanja Jörg ◽  
Daniel M. Toebbens ◽  
...  
Keyword(s):  
Interfacial Adhesion ◽  
Cu Films ◽  
Glass Substrates ◽  
Microelectronic Devices ◽  
Microstructural Effects

P‐46: Fabrication and characterization of thick Cu films deposited on G8.5 LCD glass substrates for 8k and large TV panels

2020 ◽  
Vol 51 (1) ◽  
pp. 1519-1522
Author(s):  
Guo Li ◽  
Xia Hui ◽  
Tan Zhiwei ◽  
Xiao Juncheng ◽  
Zhou Hang
Keyword(s):  
Cu Films ◽  
Glass Substrates ◽  
Fabrication And Characterization

Deposition of pure Cu films on glass substrates by decomposition of Cu complex pastes at 250 °C and additional Cu plating

2019 ◽  
Vol 473 ◽  
pp. 359-365 ◽  
Author(s):  
Chang Hyun Lee ◽  
Chang-Yong Hyun ◽  
Jong-Hyun Lee
Keyword(s):  
Cu Films ◽  
Glass Substrates ◽  
Cu Complex ◽  
Pure Cu

X-Ray Diffraction and TEM Studies of the Delamination of Copper Thin Films from Glass and Silica Substrates

1989 ◽  
Vol 167 ◽  
Author(s):  
Alan G. Fox ◽  
Rowland M. Cannon
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Bragg Diffraction ◽  
Slight Reduction ◽  
X Ray Diffraction ◽  
Dislocation Generation ◽  
X Ray ◽  
Cu Films ◽  
Glass Substrates ◽  
Tensile Strains

AbstractThe events associated with fractures along interfaces between copper thin films and glass substrates were investigated by X-ray diffraction and transmission electron microscopy (TEM). In the as-bonded films the Bragg diffraction lines were shifted and broadened (relative to pure strain-free copper) due to residual in-plane tensile strains arising from the differences in thermal contraction between the copper and the substrates; TEM studies of these films in cross-section showed that the residual stresses had been relieved somewhat by dislocation densities as high as 1010 lines/cm2 in Cu/SiO2 films.The passage of a crack along the Cu/glass interfaces led to a significant reduction in the line shift and a slight reduction in the line broadening. Thus dislocations generated by the fracture events ‘plastically relaxed’ the residual stresses present in the as-bonded Cu by superposing a compressive component onto the pre-existing in-plane tensile strains. This dislocation generation was confirmed by TEM studies. In addition, it was found that the greater the strength of an interface, the greater was the reduction in mean strain due to the fracture; this is consistent with a larger crack-tip plastic zone and the generation of greater numbers of dislocations in the Cu films by fracture along interfaces of higher toughness (i.e. bond strength).

Effect of passivation on stress relaxation in electroplated copper films

2006 ◽  
Vol 21 (6) ◽  
pp. 1512-1518 ◽  
Author(s):  
Dongwen Gan ◽  
Paul S. Ho ◽  
Yaoyu Pang ◽  
Rui Huang ◽  
Jihperng Leu ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Interfacial Adhesion ◽  
Boundary Diffusion ◽  
Isothermal Condition ◽  
Copper Films ◽  
Relaxation Rates ◽  
Cu Films ◽  
Electroplated Copper ◽  
The Relationship ◽  
Kinetics Of

The present study investigated the effect of passivation on the kinetics of interfacial mass transport by measuring stress relaxation in electroplated Cu films with four different cap layers: SiN, SiC, SiCN, and a Co metal cap. Stress curves measured under thermal cycling showed different behaviors for the unpassivated and passivated Cu films, but were essentially indifferent for the films passivated with different cap layers. On the other hand, stress relaxation measured under an isothermal condition revealed clearly the effect of passivation, indicating that interface diffusion controls the kinetics of stress relaxation. The relaxation rates in the passivated Cu films were found to decrease in the order of SiC, SiCN, SiN, and metal caps. This correlates well with previous studies on the relationship between interfacial adhesion and electromigration. A kinetic model based on coupling of interface and grain-boundary diffusion was used to deduce the interface diffusivities and the corresponding activation energies.

Nanocharacterization of Texture and Hillock Formation in Thin Al And Al-0.2%Cu Films for Thin-Film Transistors

1996 ◽  
Vol 441 ◽  
Author(s):  
H. Takatsuji ◽  
S. Tsuji ◽  
H. Kitahara ◽  
K. Tsujimoto ◽  
K. Kuroda ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Layer Structure ◽  
Liquid Crystal Display ◽  
Migration Test ◽  
Cross Sectional ◽  
Cu Films ◽  
Glass Substrates ◽  
Hillock Formation ◽  
Cu Thin Film

AbstractThe relation between the nanostructure of pure Al and Al-0.2 wt.% Cu thin films on glass substrates and anti-stress migration properties were investigated. These films were deposited on liquid-crystal display (LCD) grade glass substrate (550 x 650 mm) by means of two types of dc magnetron multi-chamber sputtering apparatus.We developed the nanoindentation techniques to accelerate the characterization time for stress migration test. By AFM and cross-sectional TEM observations, we found an unusual three-layer structure in a Al-Cu thin film with strong anti-stress migration property.

THE ADHESION OF COPPER FILMS COATED ON SILICON AND GLASS SUBSTRATES

2000 ◽  
Vol 14 (03) ◽  
pp. 103-108 ◽  
Author(s):  
M. CHEN ◽  
J. GAO
Keyword(s):  
Vickers Microhardness ◽  
Deformation Mode ◽  
Copper Films ◽  
Micro Hardness ◽  
Adhesion Properties ◽  
Cu Films ◽  
Glass Substrates ◽  
Hardness Model ◽  
Composite Hardness ◽  
Hard Substrates

A new method is developed to evaluate the adhesion properties of thin films. This method is based on a composite hardness model. In our experiments, Cu films which were deposited on Si and glass substrates by pulsed laser ablation were indented and scratched by a Vickers microhardness tester and a diamond cutter, respectively. It was found that adhesion influenced the micro-hardness of films for soft films deposited on hard substrates. This result was explained by the elastic–plastic deformation mode of indentation.

Influence of Thickness and Substrate on the Transient Reflectivity of Copper Films

2011 ◽  
Vol 464 ◽  
pp. 672-676
Author(s):  
Nai Fei Ren ◽  
Rong Xiao Wang ◽  
Jia Fang Gu ◽  
Jian Qing Ren
Keyword(s):  
Thermal Equilibrium ◽  
Laser Power ◽  
Copper Films ◽  
Pump Probe ◽  
Reflectivity Curve ◽  
Cu Films ◽  
Glass Substrates ◽  
20 Nm ◽  
K9 Glass ◽  
Peak Value

Cu films were deposited on Si and K9 glass substrates by magnetron sputtering technique. The influences of varying thicknesses and substrates on the transient reflectivity of Cu films were studied by using femtosecond laser pump-probe technology. The results show that the transient reflectivity curve of Cu films in different thicknesses have the same trend except that when they reach the peak value and recover to the balance. When the laser power is 40 mW, the influence of Si and K9 substrates on the transient reflectivity curve of 20 nm Cu films is relatively small. But when the laser power is160 mW, the influence of Si and K9 substrates on the transient reflectivity curve of 20 nm Cu films have obvious difference, the former needs much less time to reach the thermal equilibrium than of the later. At the same time, the influence of different substrates on the transient reflectivity curve of 200 nm Cu is also small.

Conduction Mechanisms in Discontinuous Copper Films

1990 ◽  
Vol 195 ◽  
Author(s):  
P. BiegaŃski ◽  
E. Mozrzymas-Dobierzewska
Keyword(s):  
Activation Energy ◽  
Copper Films ◽  
Cu Films ◽  
Glass Substrates ◽  
Conduction Mechanisms ◽  
Temperature Dependences

ABSTRACTCopper films of coverage coefficients ranging between 0.2 and 1 were evaporated onto glass substrates under vacuum conditions (p ≃ 10−8 Torr). For these films, the temperature dependences of resistance were measured in vacuo in situ. Making use of the obtained data TCR values, as a function of coverage coefficient and the activation energy for the films with different coverage coefficients were established. The resistance of films was found to change, and TCR values approaching zero for coverage coefficients between 0.63 and 0.75. This interval (∆qc) can be regarded as the percolation interval for discontinuous Cu films.

Properties of electrodeposited Fe–Cu films grown on ITO coated glass substrates at different electrolyte temperatures

2012 ◽  
Vol 24 (3) ◽  
pp. 952-957 ◽  
Author(s):  
Umut Sarac ◽  
M. Celalettin Baykul
Keyword(s):  
Cu Films ◽  
Coated Glass ◽  
Glass Substrates
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