Single-step deep reactive ion etching of ultra-deep silicon cavities with smooth sidewalls

2014 ◽  
Vol 208 ◽  
pp. 66-72 ◽  
Author(s):  
R.K. Chutani ◽  
M. Hasegawa ◽  
V. Maurice ◽  
N. Passilly ◽  
C. Gorecki
2010 ◽  
Vol 1258 ◽  
Author(s):  
Yung-Jr Hung ◽  
San-Liang Lee ◽  
Brian J. Thibeault ◽  
Larry A. Coldren

AbstractA simple and efficient approach for fabricating silicon nanopillar arrays with a high aspect ratio and controllable sidewall profiles has been developed by using holographic lithography and a novel single-step deep reactive ion etching. During the etching process, scalloping of the sidewalls can be avoided while reserving the high mask selectivity and high etching rate. Besides, the sidewall angle of resultant patterns can be adjusted by tuning the composition of the gas mixture of single-step DRIE process. We further fabricate a tapered silicon nanopillar array and observe its photonic bandgap property. We believe that the good optical performance of this tapered silicon nanopillar array realized by the proposed approach shows the promising of this process for various applications.


2011 ◽  
Vol 21 (10) ◽  
pp. 105001
Author(s):  
Ahmet Erten ◽  
Milan Makale ◽  
Xuekun Lu ◽  
Bernd Fruhberger ◽  
Santosh Kesari ◽  
...  

2017 ◽  
Vol 9 (27) ◽  
pp. 23263-23263
Author(s):  
Bryan W. K. Woo ◽  
Shannon C. Gott ◽  
Ryan A. Peck ◽  
Dong Yan ◽  
Mathias W. Rommelfanger ◽  
...  

2014 ◽  
Vol 113 ◽  
pp. 35-39 ◽  
Author(s):  
Jayalakshmi Parasuraman ◽  
Anand Summanwar ◽  
Frédéric Marty ◽  
Philippe Basset ◽  
Dan E. Angelescu ◽  
...  

2006 ◽  
Vol 16 (12) ◽  
pp. 2570-2575 ◽  
Author(s):  
Yiyong Tan ◽  
Rongchun Zhou ◽  
Haixia Zhang ◽  
Guizhang Lu ◽  
Zhihong Li

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