Growth and characterization of dual ion beam sputtered Cu2ZnSn(S, Se)4 thin films for cost-effective photovoltaic application

A variety of materials such as semiconductors, metals, and insulators have been analyzed by use of the Hitachi IMA-3 ion microprobe analyzer. From the depth profile of a GaAs/AQ GaAs superlattice(50Å), a depth resolution of 45Å was obtained at 2350Å below the surface. The stable depth profile of a multilayer plastic film was obtained by using the negative ion beam(O) as a primary ion for charge neutralization. Further, the usefulness of the total ion monitoring method for correcting the changing factors of secondary ion intensity is demonstrated.

Download Full-text

Growth and characterization of chalcostibite CuSbSe2 thin films for photovoltaic application

Applied Surface Science ◽

10.1016/j.apsusc.2017.01.279 ◽

2017 ◽

Vol 418 ◽

pp. 216-224 ◽

Cited By ~ 19

Author(s):

Kunal J. Tiwari ◽

Vijay Vinod ◽

A. Subrahmanyam ◽

P. Malar

Keyword(s):

Thin Films ◽

Photovoltaic Application

Download Full-text

Structural, Optical and Electrical Characterization of Amorphous Carbon Thin Films Grown on PTFE Substrates for Photovoltaic Application

2006 IEEE 4th World Conference on Photovoltaic Energy Conference ◽

10.1109/wcpec.2006.279447 ◽

2006 ◽

Cited By ~ 1

Author(s):

Ashraf Omer ◽

Mohamad Rusop ◽

Sudip Adhikari ◽

Sunil Adhikary ◽

Hideo Uchida ◽

...

Keyword(s):

Thin Films ◽

Amorphous Carbon ◽

Electrical Characterization ◽

Photovoltaic Application ◽

Carbon Thin Films

Download Full-text

Characterization of hydrogenated amorphous carbon thin films by end-Hall ion beam deposition

Applied Surface Science ◽

10.1016/j.apsusc.2010.12.129 ◽

2011 ◽

Vol 257 (10) ◽

pp. 4699-4705 ◽

Cited By ~ 23

Author(s):

Y. Tang ◽

Y.S. Li ◽

Q. Yang ◽

A. Hirose

Keyword(s):

Thin Films ◽

Amorphous Carbon ◽

Ion Beam ◽

Hydrogenated Amorphous Carbon ◽

Ion Beam Deposition ◽

Carbon Thin Films ◽

Hydrogenated Amorphous ◽

Beam Deposition

Download Full-text

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-402-517 ◽

1995 ◽

Vol 402 ◽

Cited By ~ 1

Author(s):

H. Shibatal ◽

Y. Makital ◽

H. Katsumata ◽

S. Kimura ◽

N. Kobayashil ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ion Beam ◽

Low Energy ◽

Knudsen Cell ◽

Ion Beam Deposition ◽

Deposited Films ◽

Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

Download Full-text