Theoretical analysis of doping concentration, layer thickness and barrier height effects on BaSi2 based homojunction solar cells toward high efficiency

The thickness dependence of the photovoltaic performance for devices based on the small molecule DR3TSBDT:PC71BM was systematically investigated and the power conversion efficiencies are found to be relatively insensitive to the thickness.

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Effect of contact barrier height on performances of BaSi2 heterojunction and homojunction solar cells

Modern Physics Letters B ◽

10.1142/s0217984921505217 ◽

2021 ◽

Author(s):

Hui Liao ◽

Chuanmeng Cheng ◽

Geming Wang ◽

Shenggao Wang ◽

Pengfei Li ◽

...

Keyword(s):

Solar Cells ◽

Barrier Height ◽

High Efficiency ◽

Carrier Generation ◽

Energy Diagram ◽

Operation Mechanism ◽

Contact Barrier ◽

Carrier Transportation ◽

Alternative Structure ◽

The Ideal

The effects of contact barrier height on performances of Si/BaSi2 p–n heterojunction, BaSi2 p–n homojunction and Si/BaSi2/Si p–i–n heterojunction were numerical calculated. Band energy diagram, built-in electric field, carrier generation and carrier transportation distributed in the devices are comprehensively investigated. BaSi2 p–n homojunction solar cells are very sensitive to front contact barrier height due to the high light absorption coefficient of front p-BaSi2 layer. Si/BaSi2 p–n heterojunction and BaSi2 p–n homojunction solar cells with donor concentration [Formula: see text] less than [Formula: see text] are apparently affected by back contact barrier height. The ideal [Formula: see text]-Si/BaSi2/[Formula: see text]-Si p–n solar cell achieves a high [Formula: see text] of 1.131 V, suggesting a promising and alternative structure to gain excellent BaSi2-based solar cells once the Urbach tail states and defects can be effectively eliminated. The results help to fundamentally understand operation mechanism and provide intuitive guidance for achieving high-efficiency BaSi2 solar cells.

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Theoretical analysis and the morphology control of vertical phase segregation in high-efficiency polymer/fullerene solar cells

High Performance Polymers ◽

10.1177/0954008313506725 ◽

2013 ◽

Vol 26 (2) ◽

pp. 197-204 ◽

Cited By ~ 4

Author(s):

Bowen Gao

Keyword(s):

Solar Cells ◽

Theoretical Analysis ◽

High Efficiency ◽

Phase Segregation ◽

Morphology Control

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Simulative Parametric Study on Heterojunction Thin Film Solar Cells Incorporating Interfacial Nanoclusters Layer

Energy Harvesting and Systems ◽

10.1515/ehs-2019-0004 ◽

2019 ◽

Vol 6 (1-2) ◽

pp. 23-28 ◽

Cited By ~ 1

Author(s):

Megha Grover ◽

Monika Nehra ◽

Deepak Kedia

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Layer Thickness ◽

Active Layer ◽

Interfacial Layer ◽

High Efficiency ◽

Copper Phthalocyanine ◽

Cell Performance ◽

Active Layer Thickness ◽

Solar Cell Performance

Abstract Organic solar cells deal with small organic molecules for absorption of light at low cost and high efficiency. In this paper, we have analyzed the photovoltaic (PV) characteristics of double heterojunction solar cell that consists of copper phthalocyanine (CuPc) and 3,4,9,10-perylenetetracarboxylic bis-benzimidazole (PTCBI) thin films. Here, CuPc and PTCBI layers are combined by an interfacial layer consisting of nanoscale dots. Different plasmonic materials (i. e. Ag, Au, and graphene) are selected as alternative nanoscale dot layer to examine their effect on solar cell performance. Further, the solar cell performance is also examined via variation in active layer thickness. The choice of interfacial layer material and variation in active layer thickness offer grounds for future efficient PV cells.

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First principles computer model showing the effect of p-layer thickness and front contact barrier height on the performance of a-Si:H p-i-n solar cells

10.1109/pvsc.1990.111886 ◽

2002 ◽

Cited By ~ 4

Author(s):

J.K. Arch ◽

F.A. Rubinelli ◽

J.Y. Hou ◽

S.J. Fonash

Keyword(s):

Solar Cells ◽

Layer Thickness ◽

Barrier Height ◽

Computer Model ◽

First Principles ◽

Contact Barrier

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High‐Efficiency Organic Solar Cells with Wide Toleration of Active Layer Thickness

Solar RRL ◽

10.1002/solr.202000476 ◽

2020 ◽

Vol 4 (10) ◽

pp. 2000476

Author(s):

Kangkang Weng ◽

Linglong Ye ◽

Chao Li ◽

Zichao Shen ◽

Jinqiu Xu ◽

...

Keyword(s):

Solar Cells ◽

Layer Thickness ◽

Active Layer ◽

Organic Solar Cells ◽

High Efficiency ◽

Active Layer Thickness

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Characterization of Potential-Induced Degradation and Recovery in CIGS Solar Cells

Energies ◽

10.3390/en14154628 ◽

2021 ◽

Vol 14 (15) ◽

pp. 4628

Author(s):

Solhee Lee ◽

Soohyun Bae ◽

Se Jin Park ◽

Jihye Gwak ◽

JaeHo Yun ◽

...

Keyword(s):

Solar Cells ◽

Alternative Energy ◽

Doping Concentration ◽

High Efficiency ◽

Cell Level ◽

Alternative Energy Sources ◽

Cigs Thin Film ◽

Current Voltage ◽

Cigs Solar Cells

The potential-induced degradation (PID) mechanism in Cu(In,Ga)(Se,S)2 (CIGS) thin-film solar cells, which are alternative energy sources with a high efficiency (>23%) and upscaling possibilities, remains unclear. Therefore, the cause of PID in CIGS solar cells was investigated in this study at the cell level. First, an appropriate PID experiment structure at the cell level was determined. Subsequently, PID and recovery tests were conducted to confirm the PID phenomenon. Light current–voltage (I–V), dark I–V, and external quantum efficiency (EQE) analyses were conducted to determine changes in the cell characteristics. In addition, capacitance–voltage (C–V) measurements were carried out to determine the doping concentration and width of the space charge region (SCR). Based on the results, the causes of PID and recovery of CIGS solar cells were explored, and it was found that PID occurs due to changes in the bulk doping concentration and built-in potential at the junction. Furthermore, by distinguishing the effects of temperature and voltage, it was found that PID phenomena occurred when potential difference was involved.

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