Polycrystalline LiTaO3 (LT) thin films have been prepared on (001)Si substrates by the sol-gel method. A Li-Ta double alkoxide prepared from lithium methoxide and tantalum ethoxide precursors was spin coated on Si and heated up to 950 °C. The dependence of the film quality upon the process variables, alkoxide concentration before hydrolysis, the water to double alkoxide ratio, and the final double alkoxide concentration, has been established. Preferential alignment of the (104) LT planes was observed parallel to the (100)Si surface. Most films present resistivities of the order of 30 kΩ · cm and breakdown field in excess of 200 kV/cm.
