Metal silicide-mediated microcrystalline silicon thin-film growth for photovoltaics

2007 ◽  
Vol 91 (6) ◽  
pp. 534-538 ◽  
Author(s):  
J KIM ◽  
W ANDERSON
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Metal Silicide ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film

Textured (111) crystalline silicon thin film growth on flexible glass by e-beam evaporation

2015 ◽  
Vol 158 ◽  
pp. 269-273 ◽  
Author(s):  
Shane McMahon ◽  
Ashok Chaudhari ◽  
Zhouying Zhao ◽  
Harry Efstathiadis
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Crystalline Silicon ◽  
Thin Film Growth ◽  
Silicon Thin Film

Modeling of Epitaxial Silicon Thin‐Film Growth on a Rotating Substrate in a Horizontal Single‐Wafer Reactor

1995 ◽  
Vol 142 (12) ◽  
pp. 4272-4278 ◽  
Author(s):  
Hitoshi Habuka ◽  
Takatoshi Nagoya ◽  
Masatake Katayama ◽  
Manabu Shimada ◽  
Kikuo Okuyama
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Epitaxial Silicon ◽  
Silicon Thin Film

Molecular-Dynamics Simulations of Hydrogenated Amorphous Silicon Thin-Film Growth

1995 ◽  
Vol 408 ◽  
Author(s):  
T. Ohira ◽  
O. Ukai ◽  
M. Noda ◽  
Y. Takeuchi ◽  
M. Murata ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Film Growth ◽  
Hydrogenated Amorphous Silicon ◽  
Md Simulations ◽  
Thin Film Growth ◽  
Silicon Thin Film ◽  
Radical Migration ◽  
Hydrogenated Amorphous

AbstractWe have performed molecular-dynamics (MD) simulations of hydrogenated amorphous silicon (a-Si:H) thin-film growth using realistic many-body semiclassical potentials developed to describe Si-H interactions. In our MD model, it was assumed that SiH3, SiH2 and the H radicals are main precursors for the thin-film growth. In MD simulations of a-Si:H thin-film growth by many significant precursor SiH3 radicals, we have evaluated average radical migration distances, defect ratios, hydrogen contents, and film growth rates as a function of different incident radical energies to know the effect of the radical energization on the properties. As a result of the comparison between the numerical and experimental results, it was observed that the agreement is fairly good, and that an increase of radical migration distance due to the radical energization is effective on a- Si:H thin-film growth with a low defect.

Microcrystalline Silicon Thin Film Growth by Electron Cyclotron Resonance Chemical Vapour Deposition at 80°C for Plastic Application Ian

2003 ◽  
Vol 762 ◽  
Author(s):  
Ian Y.Y. Bu ◽  
A.J. Flewitt ◽  
J Robertson ◽  
W.I. Milne
Keyword(s):  
Thin Film ◽  
Chemical Vapour Deposition ◽  
Cyclotron Resonance ◽  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Chemical Vapour ◽  
Electron Cyclotron ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film

AbstractMicrocrystalline silicon deposited at low temperatures (<150°C) is a candidate material for use as the channel layer in thin film transistors deposited on plastic substrates. This would enable driver electronics to be integrated onto cheap flexible AMLCD panel.In this study microcrystalline silicon was deposited by Electron Cyclotron Resonance Plasma Enhanced chemical Vapour Deposition (ECR-PECVD) at a temperature of 80°C, compatible with most plastic such as PET and PEN. A source gas mixture of SiH4 and H2 was employed. The structural and optical properties of samples deposited under a range of deposition conditions were measured.

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