Improved Silicon Thin Film Growth on Glass Substrates by Periodic Regrowth

AbstractWe have performed molecular-dynamics (MD) simulations of hydrogenated amorphous silicon (a-Si:H) thin-film growth using realistic many-body semiclassical potentials developed to describe Si-H interactions. In our MD model, it was assumed that SiH3, SiH2 and the H radicals are main precursors for the thin-film growth. In MD simulations of a-Si:H thin-film growth by many significant precursor SiH3 radicals, we have evaluated average radical migration distances, defect ratios, hydrogen contents, and film growth rates as a function of different incident radical energies to know the effect of the radical energization on the properties. As a result of the comparison between the numerical and experimental results, it was observed that the agreement is fairly good, and that an increase of radical migration distance due to the radical energization is effective on a- Si:H thin-film growth with a low defect.

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Monte Carlo simulations of amorphous hydrogenated silicon thin‐film growth

Journal of Applied Physics ◽

10.1063/1.337882 ◽

1987 ◽

Vol 61 (8) ◽

pp. 2866-2873 ◽

Cited By ~ 41

Author(s):

K. K. Gleason ◽

K. S. Wang ◽

M. K. Chen ◽

J. A. Reimer

Keyword(s):

Thin Film ◽

Monte Carlo ◽

Monte Carlo Simulations ◽

Film Growth ◽

Thin Film Growth ◽

Silicon Thin Film ◽

Hydrogenated Silicon ◽

Amorphous Hydrogenated Silicon

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Three-dimensional phase field modeling of silicon thin-film growth during directional solidification: Facet formation and grain competition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2014.02.016 ◽

2014 ◽

Vol 401 ◽

pp. 740-747 ◽

Cited By ~ 13

Author(s):

H.K. Lin ◽

C.W. Lan

Keyword(s):

Thin Film ◽

Directional Solidification ◽

Phase Field ◽

Film Growth ◽

Three Dimensional ◽

Thin Film Growth ◽

Phase Field Modeling ◽

Silicon Thin Film ◽

Field Modeling ◽

Facet Formation

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Lateral inhomogeneous boron segregation during silicon thin film growth with molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90747-1 ◽

1994 ◽

Vol 135 (1-2) ◽

pp. 246-252 ◽

Cited By ~ 2

Author(s):

D. Krüger ◽

G. Lippert ◽

R. Kurps ◽

H.J. Osten

Keyword(s):

Thin Film ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Film Growth ◽

Thin Film Growth ◽

Silicon Thin Film ◽

Boron Segregation

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The Structure of Silicon Thin Films Grown on Sapphire by MBE

MRS Proceedings ◽

10.1557/proc-107-389 ◽

1987 ◽

Vol 107 ◽

Author(s):

M. E. Twigg ◽

J. G. Pellegrino ◽

E. D. Richmond

Keyword(s):

Thin Film ◽

Thin Films ◽

Vapor Deposition ◽

Molecular Beam ◽

Film Growth ◽

Chemical Vapor ◽

Thin Film Growth ◽

Silicon Thin Film ◽

Silicon Thin Films ◽

Transmission Electron

AbstractFrom a series of imaging experiments performed in the transmission electron microscope (TEM), it is apparent that for silicon grown on sapphire (SOS) by molecular beam epitaxy (MBE), silicon thin film growth on the (1012) sapphire plane resembles that observed for analogous films grown by chemical vapor deposition (CVD). At 900°C very thin (150A) silicon films grow as islands with either the (001) or (110) planes parallel to the (1012) plane; it is also found that most of the silicon grows as (001) rather than (110) islands, as is true for CVD-grown SOS. The orientation, however, of (110) islands occuring in this MBE-grown SOS sample differs from that of (110) islands occuring in CVD-grown SOS. By following this initial 150A of growth with 2500A of silicon deposited at. 750°C, a continuous (001) film was grown in which microtwins appear to be the predominant defect. The MBE-grown SOS also resembles that grown by CVD in that the microtwin densities associated with the “majority” and “minority” twinning systems are influenced by the orientation of the sapphire substrate.

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