Growth of multi-crystalline silicon ingot by improved directional solidification process based on numerical simulation

2011 ◽  
Vol 95 (12) ◽  
pp. 3159-3164 ◽  
Author(s):  
J.W. Shur ◽  
B.K. Kang ◽  
S.J. Moon ◽  
W.W. So ◽  
D.H. Yoon
2011 ◽  
Vol 189-193 ◽  
pp. 1476-1481
Author(s):  
Kun Liu ◽  
Zhe Wang ◽  
Ren Zhi Han ◽  
Zi Ping Ren

By using Fluent software, the mathematical model of temperature field is established on directional solidification process for large-scale frustum of a cone ingot, and the result is analyzed by Origin software, Tecplot. The influences of different width/thickness ratio to directional solidification process of cone ingot are discussed in order to provide basis for design optimization and ingot quality improvement.


Sign in / Sign up

Export Citation Format

Share Document