scholarly journals Diffusion processes in germanium and silicon films grown on Si3N4 substrates

2021 ◽  
Vol 230 ◽  
pp. 111231
Author(s):  
Larisa V. Arapkina ◽  
Kirill V. Chizh ◽  
Dmitry B. Stavrovskii ◽  
Vladimir P. Dubkov ◽  
Elizabeth P. Lazareva ◽  
...  
Keyword(s):  
Diffusion Processes ◽  
Silicon Films

Meridional Circulation, Turbulence, and Diffusion Processes in Stars

1976 ◽  
Vol 32 ◽  
pp. 109-116 ◽  
Author(s):  
S. Vauclair
Keyword(s):  
Convection Zone ◽  
Diffusion Processes ◽  
Meridional Circulation ◽  
Diffusion Time ◽  
Work In Progress ◽  
First Results ◽  
Stellar Envelopes ◽  
And Diffusion ◽  
Turbulence And Diffusion ◽  
Hr Diagram

This paper gives the first results of a work in progress, in collaboration with G. Michaud and G. Vauclair. It is a first attempt to compute the effects of meridional circulation and turbulence on diffusion processes in stellar envelopes. Computations have been made for a 2 Mʘstar, which lies in the Am - δ Scuti region of the HR diagram.Let us recall that in Am stars diffusion cannot occur between the two outer convection zones, contrary to what was assumed by Watson (1970, 1971) and Smith (1971), since they are linked by overshooting (Latour, 1972; Toomre et al., 1975). But diffusion may occur at the bottom of the second convection zone. According to Vauclair et al. (1974), the second convection zone, due to He II ionization, disappears after a time equal to the helium diffusion time, and then diffusion may happen at the bottom of the first convection zone, so that the arguments by Watson and Smith are preserved.

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Ergodic Control of Diffusion Processes

2009 ◽  
Author(s):  
Ari Arapostathis ◽  
Vivek S. Borkar ◽  
Mrinal K. Ghosh
Keyword(s):  
Diffusion Processes ◽  
Ergodic Control

NMR-Study of Structure and Diffusion Processes in Li3N

1980 ◽  
Vol 41 (C6) ◽  
pp. C6-28-C6-31 ◽  
Author(s):  
R. Messer ◽  
H. Birli ◽  
K. Differt
Keyword(s):  
Diffusion Processes ◽  
Nmr Study ◽  
And Diffusion

HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Silicon Films ◽  
Ion Implanted

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

Effect of cluster-gradient architecture of nanostructured topocomposites on features of tribointeraction with heterophased material

2020 ◽  
pp. 130-135
Author(s):  
D.N. Korotaev ◽  
K.N. Poleshchenko ◽  
E.N. Eremin ◽  
E.E. Tarasov
Keyword(s):  
Wear Resistance ◽  
Titanium Alloy ◽  
Energy Dissipation ◽  
Phase Structure ◽  
Diffusion Processes ◽  
Structural Phase ◽  
High Wear Resistance ◽  
Wear Characteristics ◽  
And Diffusion

The wear resistance and wear characteristics of cluster-gradient architecture (CGA) nanostructured topocomposites are studied. The specifics of tribocontact interaction under microcutting conditions is considered. The reasons for retention of high wear resistance of this class of nanostructured topocomposites are studied. The mechanisms of energy dissipation from the tribocontact zone, due to the nanogeometry and the structural-phase structure of CGA topocomposites are analyzed. The role of triboactivated deformation and diffusion processes in providing increased wear resistance of carbide-based topocomposites is shown. They are tested under the conditions of blade processing of heat-resistant titanium alloy.

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