Meridional Circulation, Turbulence, and Diffusion Processes in Stars

1976 ◽  
Vol 32 ◽  
pp. 109-116 ◽  
Author(s):  
S. Vauclair
Keyword(s):  
Convection Zone ◽  
Diffusion Processes ◽  
Meridional Circulation ◽  
Diffusion Time ◽  
Work In Progress ◽  
First Results ◽  
Stellar Envelopes ◽  
And Diffusion ◽  
Turbulence And Diffusion ◽  
Hr Diagram

This paper gives the first results of a work in progress, in collaboration with G. Michaud and G. Vauclair. It is a first attempt to compute the effects of meridional circulation and turbulence on diffusion processes in stellar envelopes. Computations have been made for a 2 Mʘstar, which lies in the Am - δ Scuti region of the HR diagram.Let us recall that in Am stars diffusion cannot occur between the two outer convection zones, contrary to what was assumed by Watson (1970, 1971) and Smith (1971), since they are linked by overshooting (Latour, 1972; Toomre et al., 1975). But diffusion may occur at the bottom of the second convection zone. According to Vauclair et al. (1974), the second convection zone, due to He II ionization, disappears after a time equal to the helium diffusion time, and then diffusion may happen at the bottom of the first convection zone, so that the arguments by Watson and Smith are preserved.

scholarly journals Sakurai’s Object: Constraints from its Variability?

1998 ◽  
Vol 11 (1) ◽  
pp. 360-360
Author(s):  
T. Gautschy ◽  
H.W. Duerbeck ◽  
A.M. Van Genderen ◽  
S. Benetti
Keyword(s):  
Cooling Rate ◽  
Nuclear Energy ◽  
Stability Analyses ◽  
The Past ◽  
Stellar Pulsations ◽  
First Results ◽  
Effective Temperatures ◽  
Stellar Envelopes ◽  
Light Variability ◽  
Hr Diagram

The peculiar outburst of the star baptized Sakurai’s Object (SO) is a conceivable example of a late He shell flash in a post-AGB object. The new source of nuclear energy forces such objects toward high luminosities and eventually low effective temperatures; they cross the HR diagram in a comparable fashion as FG Sge did in the past - i.e., they move noticeably on the HR diagram on human timescales. From monitoring campaigns of SO during the last year, first estimates of its cooling rate were derived and in particular cyclic light variability was established. We present first results from attempts to model stellar envelopes appropriate for SO. As we hypothesize the light variability to be attributable to stellar pulsations, we aim at constraining the basic stellar parameters based on stability analyses of our envelope models. Radial, nonadiabatic stability computations provided predictions of the modal content which should be observable as SO evolves. The particular components in such mode spectra of SO as they are to appear in the coming years should indeed help to constrain basic stellar parameters such as mass and luminosity.

NMR-Study of Structure and Diffusion Processes in Li3N

1980 ◽  
Vol 41 (C6) ◽  
pp. C6-28-C6-31 ◽  
Author(s):  
R. Messer ◽  
H. Birli ◽  
K. Differt
Keyword(s):  
Diffusion Processes ◽  
Nmr Study ◽  
And Diffusion

Effect of cluster-gradient architecture of nanostructured topocomposites on features of tribointeraction with heterophased material

2020 ◽  
pp. 130-135
Author(s):  
D.N. Korotaev ◽  
K.N. Poleshchenko ◽  
E.N. Eremin ◽  
E.E. Tarasov
Keyword(s):  
Wear Resistance ◽  
Titanium Alloy ◽  
Energy Dissipation ◽  
Phase Structure ◽  
Diffusion Processes ◽  
Structural Phase ◽  
High Wear Resistance ◽  
Wear Characteristics ◽  
And Diffusion

The wear resistance and wear characteristics of cluster-gradient architecture (CGA) nanostructured topocomposites are studied. The specifics of tribocontact interaction under microcutting conditions is considered. The reasons for retention of high wear resistance of this class of nanostructured topocomposites are studied. The mechanisms of energy dissipation from the tribocontact zone, due to the nanogeometry and the structural-phase structure of CGA topocomposites are analyzed. The role of triboactivated deformation and diffusion processes in providing increased wear resistance of carbide-based topocomposites is shown. They are tested under the conditions of blade processing of heat-resistant titanium alloy.

Certain Problems with the Application of Stochastic Diffusion Processes for the Description of Chemical Engineering Phenomena. Diffusional Change of Solid Particle Size

1996 ◽  
Vol 61 (4) ◽  
pp. 536-563
Author(s):  
Vladimír Kudrna ◽  
Pavel Hasal
Keyword(s):  
Particle Size ◽  
Solid Particle ◽  
Chemical Engineering ◽  
Diffusion Processes ◽  
Granular Systems ◽  
Size Distributions ◽  
Particle Size Distributions ◽  
Diffusion Term ◽  
Population Balances ◽  
And Diffusion

To the description of changes of solid particle size in population, the application was proposed of stochastic differential equations and diffusion equations adequate to them making it possible to express the development of these populations in time. Particular relations were derived for some particle size distributions in flow and batch equipments. It was shown that it is expedient to complement the population balances often used for the description of granular systems by a "diffusion" term making it possible to express the effects of random influences in the growth process and/or particle diminution.

scholarly journals Influence of Geometry on Thin Layer and Diffusion Processes at Carbon Electrodes

Langmuir ◽  
2021 ◽  
Author(s):  
Qun Cao ◽  
Zijun Shao ◽  
Dale K. Hensley ◽  
Nickolay V. Lavrik ◽  
B. Jill Venton
Keyword(s):  
Thin Layer ◽  
Diffusion Processes ◽  
Carbon Electrodes ◽  
And Diffusion

Decoupling Electrochemical Reaction and Diffusion Processes in Ionically-Conductive Solids on the Nanometer Scale

ACS Nano ◽  
2010 ◽  
Vol 4 (12) ◽  
pp. 7349-7357 ◽  
Author(s):  
Nina Balke ◽  
Stephen Jesse ◽  
Yoongu Kim ◽  
Leslie Adamczyk ◽  
Ilia N. Ivanov ◽  
...  
Keyword(s):  
Diffusion Processes ◽  
Electrochemical Reaction ◽  
Nanometer Scale ◽  
And Diffusion ◽  
Reaction And Diffusion

scholarly journals Diffusion in CP Stars: The Quest for Accuracy

1998 ◽  
Vol 11 (2) ◽  
pp. 671-673
Author(s):  
G. Alecian
Keyword(s):  
Computational Methods ◽  
Stellar Evolution ◽  
Diffusion Processes ◽  
Stellar Atmospheres ◽  
Time Dependent ◽  
Data Bases ◽  
Self Consistent ◽  
Stellar Envelopes ◽  
Better Than

We present a brief review about recent progresses concerning the study of diffusion processes in CP stars. The most spectacular of them concerns the calculation of radiative accelerations in stellar envelopes for which an accuracy better than 30% can now be reached for a large number of ions. This improvement is mainly due to huge and accurate atomic and opacity data bases available since the beginning of the 90’s. Developments of efficient computational methods have been carried out to take advantage of these new data. These progresses have, in turn, led to a better understanding of how the element stratification is building up with time. A computation of self-consistent stellar evolution models, including time-dependent diffusion, can now be within the scope of the next few years. However, the progresses previously mentioned do not apply for stellar atmospheres and upper layers of envelopes.

Rapid Thermal Annealing of Ni/Al/Si and Ni/Si Systems

1986 ◽  
Vol 74 ◽  
Author(s):  
A. Katz ◽  
Y. KOMEM
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Processing ◽  
Reference System ◽  
Diffusion Processes ◽  
Eutectic Temperature ◽  
Melting Process ◽  
Polycrystalline Layer ◽  
Smooth Interface ◽  
And Diffusion

AbstractThe effect of Rapid Thermal Annealing on phase formation and diffusion processes in the Ni(30 nm) /Al(10 nm)/Si system was studied and coxpared to a Ni(30 nm)/Si reference system. Heat treatments were carried out at temperatures between 400°C and 900°C for 2 seconds.The results obtained by means of TEM, AES and XRD indicated that the Ni/Al/Si system underwent a local melting in the intermediate Al layer at the Al/Si eutectic temperature (577°C). This reaction, due to the rapid melting process, resulted in formation of a unique layered-structure composed of a columnar polycrystalline layer (60 nm thick) of Ni2Si and NiSi adjacent to the Si substrate with relatively smooth interface and an outer layer of two separate polycrystalline films (both about 10 m thick) of Al3Ni (inside) and Ni(Al0.5Si0.5 ) (outside). Under the same rapid thermal processing conditions the Ni/Si reference system underwent a solid state reaction which resulted in the formation of a polycrystalline layer (60 nm thick) composed of Ni2Si and NiSi as well as NiSi2.

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