HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Silicon Films ◽  
Ion Implanted

Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2150-2154 ◽  
Author(s):  
Jin-Wook Seo ◽  
Yoshitaka Kokubo ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Phase Recrystallization ◽  
Crystal Seed ◽  
Ion Implanted

Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films

2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5063-5068 ◽  
Author(s):  
Jin-Wook Seo ◽  
Satoru Akiyama ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Excimer Laser Annealing ◽  
Phase Recrystallization ◽  
Crystal Seed ◽  
Ion Implanted

On the Compensation Mechanism of Amorphous Silicon Films: Study of Stability

1997 ◽  
Vol 467 ◽  
Author(s):  
D. Caputo ◽  
G. De Cesare ◽  
F. Palma ◽  
M. Tucci ◽  
C. Minarini ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Formation Mechanism ◽  
Boron Concentration ◽  
Defect Density ◽  
Silicon Films ◽  
Compensation Mechanism ◽  
Relevant Result ◽  
Wide Range

ABSTRACTWe investigated a-Si:H compensated materials deposited over a wide range of gas dopant concentrations, from 0.125 ppm up to 103 ppm.We achieved compensation for different ratio in the gas phase of diborane and phosphine, depending on their concentration. As a relevant result, we found that at constant boron concentration compensation occurs by using two different values of phosphine flow. This behavior can be described by a change of formation mechanism involving active dopants, defects and boron-phosphorus complex, that occurs in a different way depending on the dopant concentrations.The two compensation regimes are evidenced also by a different behavior under light soaking. Furthermore we found that photocurrent evolution under illumination is determined by two concurrent mechanisms: activation of dopant species and increase of defect density.

Circular etch pits in ion‐implanted amorphous silicon films

1973 ◽  
Vol 22 (6) ◽  
pp. 274-275 ◽  
Author(s):  
K.N. Tu ◽  
S.I. Tan ◽  
B.L. Crowder
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Etch Pits ◽  
Ion Implanted

In-situ electrical measurement in ion implanted amorphous silicon films

1981 ◽  
Vol 81 (9) ◽  
pp. 519-521 ◽  
Author(s):  
Y. Ochiai ◽  
K. Uematsu ◽  
K. Takita ◽  
K. Masuda
Keyword(s):  
Amorphous Silicon ◽  
Electrical Measurement ◽  
Silicon Films ◽  
Ion Implanted

Observtion of an oxygen-related mobility-gap defect in ion-implanted hydrogenated amorphous silicon films

1987 ◽  
Vol 35 (8) ◽  
pp. 4141-4144 ◽  
Author(s):  
C. E. Michelson ◽  
A. V. Gelatos ◽  
J. D. Cohen ◽  
J. P. Harbison
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogenated Amorphous ◽  
Mobility Gap ◽  
Ion Implanted
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