Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

2022 ◽  
pp. 107141
Author(s):  
Baiyin Liu ◽  
Fujun Xu ◽  
Jiaming Wang ◽  
Jing Lang ◽  
Liubing Wang ◽  
...  
1997 ◽  
Vol 482 ◽  
Author(s):  
Dae-Woo Kim ◽  
Hong Koo Baik ◽  
Cha Yeon Kim ◽  
Sung Woo Kim ◽  
Chang Hee Hong

AbstractWe investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N2 ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10-6 Ωcm2 was obtained for Au(1000 Å)/Ni(400 Å)/Ti(400 Å)/Si(1460 Å)/Ti(150 Å) after annealing at 900 °C for 3min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function


1996 ◽  
Vol 35 (Part 1, No. 9B) ◽  
pp. 4890-4895 ◽  
Author(s):  
Chang Seok Kang ◽  
Cheol Seong Hwang ◽  
Hag-Ju Cho ◽  
Byoung Taek Lee ◽  
Soon Oh Park ◽  
...  

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