scholarly journals Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb(Mg1∕3Nb2∕3)O3–PbTiO3 films grown on (100)cSrRuO3‖(100)SrTiO3 substrates by metal-organic chemical vapor deposition

2006 ◽  
Vol 100 (5) ◽  
pp. 054110 ◽  
Author(s):  
Shintaro Yokoyama ◽  
Satoshi Okamoto ◽  
Hiroshi Funakubo ◽  
Takashi Iijima ◽  
Keisuke Saito ◽  
...  
1997 ◽  
Vol 482 ◽  
Author(s):  
Dae-Woo Kim ◽  
Hong Koo Baik ◽  
Cha Yeon Kim ◽  
Sung Woo Kim ◽  
Chang Hee Hong

AbstractWe investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N2 ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10-6 Ωcm2 was obtained for Au(1000 Å)/Ni(400 Å)/Ti(400 Å)/Si(1460 Å)/Ti(150 Å) after annealing at 900 °C for 3min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function


2018 ◽  
Vol 12 (1) ◽  
pp. 015502 ◽  
Author(s):  
Ramesh Kumar Kakkerla ◽  
Deepak Anandan ◽  
Sankalp Kumar Singh ◽  
Hung Wei Yu ◽  
Ching-Ting Lee ◽  
...  

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