scholarly journals Optical and Electrical Properties of ZnO Hybrid Structure Grown on Glass Substrate by Metal Organic Chemical Vapor Deposition

2014 ◽  
Vol 24 (10) ◽  
pp. 543-549
Author(s):  
Dae-Sik Kim ◽  
Byung Hoon Kang ◽  
Chang-Min Lee ◽  
Dongjin Byun
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Glass Substrate ◽  
Chemical Vapor ◽  
Hybrid Structure ◽  
Organic Chemical ◽  
Optical And Electrical Properties ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Ohmic contact to GaN grown by MOCVD

1997 ◽  
Vol 482 ◽  
Author(s):  
Dae-Woo Kim ◽  
Hong Koo Baik ◽  
Cha Yeon Kim ◽  
Sung Woo Kim ◽  
Chang Hee Hong
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Ohmic Contacts ◽  
Chemical Vapor ◽  
Specific Contact Resistance ◽  
Organic Chemical ◽  
Specific Contact ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractWe investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N2 ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10-6 Ωcm2 was obtained for Au(1000 Å)/Ni(400 Å)/Ti(400 Å)/Si(1460 Å)/Ti(150 Å) after annealing at 900 °C for 3min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function

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