Room-temperature multiferroic properties of Bi4.15Nd0.85Ti3FeO15 thin films prepared by the metal–organic decomposition method

2010 ◽  
Vol 150 (35-36) ◽  
pp. 1646-1649 ◽  
Author(s):  
Fengzhen Huang ◽  
Xiaomei Lu ◽  
Cong Chen ◽  
Weiwei Lin ◽  
Xiaochun Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Decomposition Method ◽  
Room Temperature ◽  
Multiferroic Properties ◽  
Metal Organic ◽  
Organic Decomposition

Effect of Annealing Temperature on the Structures and Properties of Bi4.15Nd0.85Ti3FeO15 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 290-294
Author(s):  
Yu Pei ◽  
Feng Ming Pan
Keyword(s):  
Thin Films ◽  
Fatigue Resistance ◽  
Decomposition Method ◽  
Room Temperature ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Si Substrates ◽  
Structures And Properties ◽  
Metal Organic ◽  
Organic Decomposition

To investigate the effect of annealing temperature on the structures and properties of Bi4.15Nd0.85Ti3FeO15 (BNTF), their thin films with four perovskite slabs were deposited on Pt/Ti/SiO2/Si substrates by the metal-organic decomposition method. Good remanent polarization and excellent fatigue resistance were observed at room temperature. The BNTF thin films annealed at 780°C presented better ferroelectricity than those annealed at 700°C-780°C. Ferromagnetic of BNTF thin films was not observed at room temperature.

Strong Hole Self-Doping in LaMnO3 Thin Film on a-SiO2 Substrate Produced by Metal Organic Decomposition Method

2019 ◽  
Vol 962 ◽  
pp. 17-21 ◽  
Author(s):  
Hiromi Kobori ◽  
Tohru Kitamura ◽  
Toshifumi Taniguchi ◽  
Tetsuo Shimizu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Single Crystal ◽  
Decomposition Method ◽  
Treatment Conditions ◽  
Gas Atmosphere ◽  
Metal Organic ◽  
Temperature Time ◽  
Organic Decomposition

We have studied the strong hole self-doping into LaMnO3(LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment conditions, LMO thin films have been prepared by the MOD method in the 100 % O2gas atmosphere. We consider that the excess of O2-ions in LMO thin films induces the strong hole self-doping into LMO ones. The quantity of excess O2-ions in LMO is sensitive to the heat treatment conditions of the LMO production, especially the temperature, time and atmosphere gas. Although LMO single crystal is an antiferromagnetic insulator, LMO thin films we have produced in the 100 % O2gas atmosphere by use of the MOD method shows the properties of ferromagnetic metal.

Preparation of (La1−xSrx)MnO3−δ thin films on Si (100) substrates by a metal-organic decomposition method for smart radiation devices

2017 ◽  
Vol 626 ◽  
pp. 154-158 ◽  
Author(s):  
Tadashi Shiota ◽  
Yuko Mori ◽  
Jun Sugiyama ◽  
Osamu Sakurai ◽  
Akio Nishiyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Decomposition Method ◽  
Metal Organic ◽  
Organic Decomposition
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