Preparation of rare earth CeO2 thin films using metal organic decomposition method for metal-oxide–semiconductor capacitors

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-017-7072-6 ◽

2017 ◽

Vol 28 (17) ◽

pp. 12503-12508 ◽

Author(s):

Khushabu S. Agrawal ◽

Vilas S. Patil ◽

Anil G. Khairnar ◽

Ashok M. Mahajan

Keyword(s):

Metal Oxide ◽

Decomposition Method ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Organic ◽

Organic Decomposition

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Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4770324 ◽

2012 ◽

Vol 112 (12) ◽

pp. 124511 ◽

Author(s):

Jiwon Chang ◽

Leonard F. Register ◽

Sanjay K. Banerjee

Keyword(s):

Metal Oxide ◽

Topological Insulator ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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β-Ga2O3 nanowires and thin films for metal oxide semiconductor gas sensors: Sensing mechanisms and performance enhancement strategies

Journal of Materiomics ◽

10.1016/j.jmat.2019.08.003 ◽

2019 ◽

Vol 5 (4) ◽

pp. 542-557 ◽

Author(s):

Adeel Afzal

Keyword(s):

Metal Oxide ◽

Gas Sensors ◽

Performance Enhancement ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Gas Sensors ◽

And Performance

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Effects of vicinal substrates on the orientation of Bi2Sr2CaCu2O8+x thin films when the metal-organic decomposition method is used

Journal of Physics Conference Series ◽

10.1088/1742-6596/1293/1/012012 ◽

2019 ◽

Vol 1293 ◽

pp. 012012 ◽

Author(s):

Y Yamada ◽

T Okamoto

Keyword(s):

Decomposition Method ◽

Metal Organic ◽

Organic Decomposition

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Control of Oxygen Vacancies in TiO 6 Octahedra of Amorphous BaTiO 3 Thin Films with Tunable Built‐In Electric Field in a ‐BaTiO 3 / p ‐Si Heterojunction for Metal–Oxide–Semiconductor Applications

physica status solidi (a) ◽

10.1002/pssa.201900941 ◽

2020 ◽

Vol 217 (10) ◽

pp. 1900941

Author(s):

Jian Gu ◽

Wei Tian ◽

Zongrong Wang ◽

Ning Ma ◽

Piyi Du

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Oxygen Vacancies ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Applied Physics Letters ◽

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

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(Invited) Rare Earth Doped Metal-Oxide-Semiconductor Structures: A Promising Material System or a Dead End of Optoelectronic Evolution?

ECS Meeting Abstracts ◽

10.1149/ma2014-01/42/1593 ◽

2014 ◽

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Promising Material ◽

Material System ◽

Semiconductor Structures ◽

Dead End ◽

Rare Earth Doped

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ChemInform Abstract: Preparation of Device-Quality SiO2 Thin Films by Remote Plasma- Enhanced Chemical Vapor Deposition (PECVD): Applications in Metal- Oxide-Semiconductor (MOS) Devices

10.1002/chin.199636322 ◽

2010 ◽

Vol 27 (36) ◽

pp. no-no

Author(s):

G. LUCOVSKY

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Remote Plasma ◽

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Fluctuation-conductivity Characterization of Superconducting Bi2Sr2CaCu2O8+d Thin Films Prepared by the Metal-organic Decomposition Method

Physics Procedia ◽

10.1016/j.phpro.2013.04.086 ◽

2013 ◽

Vol 45 ◽

pp. 193-196 ◽

Author(s):

Y. Deguchi ◽

H. Kikuchi ◽

N. Mori ◽

Y. Yamada ◽

T. Atsumi ◽

...

Keyword(s):

Decomposition Method ◽

Fluctuation Conductivity ◽

Metal Organic ◽

Organic Decomposition

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Preparation of device-quality SiO2 thin films by remote plasma-enhanced chemical vapour deposition (PECVD): Applications in metal-oxide-semiconductor (MOS) devices

Advanced Materials for Optics and Electronics ◽

10.1002/(sici)1099-0712(199603)6:2<55::aid-amo226>3.0.co;2-j ◽

1996 ◽

Vol 6 (2) ◽

pp. 55-72 ◽

Author(s):

Gerald Lucovsky

Keyword(s):

Metal Oxide ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Remote Plasma ◽

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Importance of interface engineering for synthesis of SrHfO3perovskite thin films on Si substrates through crystallization of amorphous films and control of flat-band voltages of metal–oxide–semiconductor capacitors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ea03 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EA03 ◽

Author(s):

Shinji Migita ◽

Yukinori Morita ◽

Meishoku Masahara ◽

Hiroyuki Ota

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Interface Engineering ◽

Amorphous Films ◽

Si Substrates ◽

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