The effects of geometry, exchange and electric fields on transport properties of nonsymmetric T-shaped silicene nanoribbons

2018 ◽  
Vol 276 ◽  
pp. 19-23 ◽  
Author(s):  
Chengming Gu ◽  
Xiuqiang Wu ◽  
Haiyang Zhang ◽  
Yujie Bai ◽  
Hengyi Xu ◽  
...  
RSC Advances ◽  
2017 ◽  
Vol 7 (21) ◽  
pp. 12783-12792 ◽  
Author(s):  
Sukhbir Singh ◽  
Abir De Sarkar ◽  
Bijender Singh ◽  
Inderpreet Kaur

The electronic and transport properties of armchair silicene nanoribbons (ASiNRs) doped with various elements are investigated.


RSC Advances ◽  
2014 ◽  
Vol 4 (103) ◽  
pp. 58941-58948 ◽  
Author(s):  
X. Q. Deng ◽  
Z. H. Zhang ◽  
G. P. Tang ◽  
Z. Q. Fan ◽  
C. H. Yang

2016 ◽  
Vol 28 (3) ◽  
pp. 035302 ◽  
Author(s):  
K Iordanidou ◽  
M Houssa ◽  
B van den Broek ◽  
G Pourtois ◽  
V V Afanas’ev ◽  
...  

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940008
Author(s):  
Krishnendu Ghosh ◽  
Uttam Singisetti

We present a comprehensive review of high-field transport properties in an emerging and trending ultra-widebandgap semiconductor β-Ga2O3. The focus is on the theoretical understanding of the microscopic mechanisms that control the dynamics of farfrom-equilibrium electrons. A manifold of density functional calculations and Boltzmann theory based transport formalism unravels the behavior of the electron distribution under a varied range of external electric fields. The key high-field transport properties that govern electronic device performance, like velocity and ionization co-efficients, are enlightened in detail with physical insights. Anisotropies in the above transport co-efficients are probed from the microscopic investigation of bandstructure, electron-phonon interactions, and electron-electron interactions.


2003 ◽  
Vol 772 ◽  
Author(s):  
Buzz Wincheski ◽  
Min Namkung ◽  
Jan Smits ◽  
Phillip Williams ◽  
Robert Harvey

AbstractBallistic and spin coherent transport in single walled carbon nanotubes (SWCNT) are predicted to enable high sensitivity single-nanotube devices for strain and magnetic field sensing. Based upon these phenomena, electron beam lithography procedures have been developed to study the transport properties of purified HiPCO single walled carbon nanotubes for development into sensory materials for nondestructive evaluation. Purified nanotubes are dispersed in solvent suspension and then deposited on the device substrate before metallic contacts are defined and deposited through electron beam lithography. This procedure produces randomly dispersed ropes, typically 2 – 20 nm in diameter, of single walled carbon nanotubes. Transport and scanning probe microscopy studies have shown a good correlation between the junction resistance and tube density, alignment, and contact quality. In order to improve nanotubes at specific locations on the substrate surface. Lithographic techniques are used to define local areas where high frequency electric fields are to be concentrated. Application of the aligned with the electric field lines. A second electron beam lithography layer is then used to deposit metallic contacts across the aligned tubes. Experimental measurements are presented showing the increased tube alignment and improvement in the transport properties of the junctions.


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