Transport properties of a non-degenerate ferromagnetic semiconductor in high electric fields. III. Low temperature region

1972 ◽  
Vol 14 (2) ◽  
pp. 423-430 ◽  
Author(s):  
S. Roth ◽  
W. Haubenreisser
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Electric Fields ◽  
Temperature Region ◽  
Ferromagnetic Semiconductor ◽  
High Electric Fields

scholarly journals Terahertz power dissipation spectra of electrons in bulk GaAs under high electric fields at low temperature

2009 ◽  
Vol 58 (4) ◽  
pp. 2692
Author(s):  
Zhu Yi-Ming ◽  
Kaz Hirakawa ◽  
Chen Lin ◽  
He Bo-Yong ◽  
Huang Yuan-Shen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electric Fields ◽  
Power Dissipation ◽  
Bulk Gaas ◽  
High Electric Fields

Origin of Diversified Transport Properties of MgB2

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3672-3674
Author(s):  
Kijoon H. P. Kim ◽  
C. U. Jung ◽  
Heon-Jung Kim ◽  
Min-Seok Park ◽  
Mun-Seog Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Temperature Region ◽  
Residual Resistivity ◽  
Transition Width ◽  
Residual Resistivity Ratio ◽  
Resistivity Ratio ◽  
Excess Mg

We investigated the transport properties of MgB 2 while changing the contents of excess Mg. The samples containing almost no excess Mg showed the highest Tc and the sharpest transition width (ΔTc). A residual resistivity ratio (RRR) of ~ 5.8, and a magnetoresistance (MR) of 12%, at 40 K, were obtained for this stoichiometric sample. Moreover, no upturn of resistivity in a low temperature region at 10 Tesla was observed. However, the samples containing appreciable amounts of excess Mg showed quite different behaviors; the values of ΔTc, RRR and MR were much larger. Surprisingly, big upturn appeared in this Mg-excess MgB 2

Low-Temperature Switching in PbTe at High Electric Fields

1993 ◽  
Vol 103-105 ◽  
pp. 437-442
Author(s):  
B.A. Akimov ◽  
A.V. Albul ◽  
E.V. Bogdanov
Keyword(s):  
Low Temperature ◽  
Electric Fields ◽  
High Electric Fields

Low-temperature switching in PbTe(Ga) at high electric fields

1993 ◽  
Vol 8 (1S) ◽  
pp. S447-S450 ◽  
Author(s):  
B A Akimov ◽  
A V Albul ◽  
E V Bogdanov
Keyword(s):  
Low Temperature ◽  
Electric Fields ◽  
High Electric Fields

The Joint Measurements of Electroluminescence and Photoluminescence of PET Films under Low Temperature

2010 ◽  
Vol 44-47 ◽  
pp. 2632-2636 ◽  
Author(s):  
Jia Qi Lin ◽  
Chen Wang ◽  
Jun Hui Shi
Keyword(s):  
Low Temperature ◽  
Electric Fields ◽  
Light Emission ◽  
Threshold Value ◽  
Breakdown Field ◽  
Xenon Lamp ◽  
Significant Change ◽  
High Electric Fields ◽  
Set Up ◽  
Pet Films

The EL intensity and the spectrum of the PET films were tested under the low temperature by home-made experimental set-up on the conditions of DC high electric fields and irradiated by xenon lamp. The result shows that there are emission peaks at about 350~450nm, 500~600nm and 750nm in the EL spectrum of the PET films. The intensity of light emission increases with the applied electric fields; the pre-breakdown field is about 3.3MV/cm, this threshold value is no significant change which compares with the normal temperature.

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