A novel InxGa1−xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density

2005 ◽  
Vol 49 (2) ◽  
pp. 199-203 ◽  
Author(s):  
Y.C. Kong ◽  
Y.D. Zheng ◽  
C.H. Zhou ◽  
Y.Z. Deng ◽  
B. Shen ◽  
...  
1984 ◽  
Vol 23 (Part 2, No. 3) ◽  
pp. L150-L152 ◽  
Author(s):  
Yoshifumi Katayama ◽  
Makoto Morioka ◽  
Yasushi Sawada ◽  
Kiichi Ueyanagi ◽  
Tomoyoshi Mishima ◽  
...  

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