A novel InxGa1−xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
2005 ◽
Vol 49
(2)
◽
pp. 199-203
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1986 ◽
Vol 33
(5)
◽
pp. 707-711
◽
1986 ◽
pp. 238-251
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1984 ◽
Vol 23
(Part 2, No. 3)
◽
pp. L150-L152
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2010 ◽
Vol 55
(11)
◽
pp. 1285-1294
◽
2010 ◽
Vol 39
(3)
◽
pp. 158-164
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