Phonon‐electron interactions in the two‐dimensional electron gas in InGaAs‐InAlAs modulation‐doped field‐effect transistor structures studied by Raman scattering

1993 ◽  
Vol 63 (14) ◽  
pp. 1909-1911 ◽  
Author(s):  
J. E. Maslar ◽  
J. F. Dorsten ◽  
P. W. Bohn ◽  
S. Agarwala ◽  
I. Adesida ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Effect Transistor ◽  
Dimensional Electron Gas ◽  
Electron Interactions

A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure

1984 ◽  
Vol 23 (Part 2, No. 3) ◽  
pp. L150-L152 ◽  
Author(s):  
Yoshifumi Katayama ◽  
Makoto Morioka ◽  
Yasushi Sawada ◽  
Kiichi Ueyanagi ◽  
Tomoyoshi Mishima ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Gas Field ◽  
Effect Transistor ◽  
Dimensional Electron Gas
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