Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300keV using Monte Carlo simulations

2005 ◽  
Vol 49 (7) ◽  
pp. 1241-1247
Author(s):  
H.Y. Chan ◽  
M.P. Srinivasan ◽  
F. Benistant ◽  
H.M. Jin ◽  
L. Chan
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Monte Carlo Simulations ◽  
Crystalline Silicon

Channeling in 4H-SiC from an Application Point of View

2019 ◽  
Vol 963 ◽  
pp. 386-389 ◽  
Author(s):  
Peter Pichler ◽  
Tomasz Sledziewski ◽  
Volker Häublein ◽  
Anton Bauer ◽  
Tobias Erlbacher
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Monte Carlo Simulations ◽  
Electronic Devices ◽  
Point Of View ◽  
Power Electronic ◽  
Application Point ◽  
Doping Profiles

During ion implantation into monocrystalline semiconductors, some of the implanted atoms will be deflected to crystal directions along which they may penetrate deeply into the crystal. We investigate such channeling effects for Al and N implantation into 4H-SiC by Monte Carlo simulations. The focus of the work is on the effects of channeling on doping profiles, the relevance for the net doping of typical power electronic devices, and the influence of scattering oxides.

The Structure of the Boron-Hydrogen Complex in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
A. D. Marwick ◽  
G. S. Oehrlein ◽  
J. H. Barrett ◽  
N. M Johnson
Keyword(s):  
Monte Carlo ◽  
Hydrogen Atom ◽  
Monte Carlo Simulations ◽  
Boron Atom ◽  
Small Proportion ◽  
Crystalline Silicon ◽  
Hydrogen Atoms ◽  
Substitutional Site ◽  
Bond Center ◽  
Center Site

ABSTRACTChanneling and lattice location has been used to investigate the structure of the boron-hydrogen complex in crystalline silicon. The positions of both the boron and hydrogen atoms have been determined. The results are compared with Monte-Carlo simulations. The boron atom in the B-H pair is found to be displaced from a substitutional site by 0.28±0.03Å, while the hydrogen atom is predominantly at a bond-center site, with a small proportion in a back-bonded position.

Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation

2017 ◽  
Vol 897 ◽  
pp. 367-370
Author(s):  
Sophie Guillemin ◽  
Romain Esteve ◽  
Christian Heidorn ◽  
Gerald Unegg ◽  
Gerald Reinwald ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Monte Carlo Simulations ◽  
Wet Etching ◽  
Etching Solution ◽  
Experimental Findings ◽  
Wet Etch ◽  
Ion Implanted

In this work investigation on wet etching of ion implanted 4H-SiC has been performed. Starting with the search for a suitable etching solution is followed by investigations on how to damage 4H-SiC in an efficient way involving different implantation species in various doses. With the help of Monte Carlo simulations a model for the experimental findings is proposed to derive the limitations for the wet etch capability.

Direct Observation of Intermixing in GAAS/AIAS Multilayers After Very Low-Dose Ion-Implantation

1989 ◽  
Vol 157 ◽  
Author(s):  
M. Bode ◽  
A. Ourmazd ◽  
J.A. Rentschler ◽  
M. Hong ◽  
L.C. Feldman ◽  
...  
Keyword(s):  
Pattern Recognition ◽  
Monte Carlo ◽  
Ion Implantation ◽  
Monte Carlo Simulations ◽  
Low Dose ◽  
Atomic Plane ◽  
Lattice Imaging ◽  
Energetic Ions ◽  
Before And After ◽  
Composition Profiles

ABSTRACTWe combine chemical lattice imaging and digital vector pattern recognition to study quantitatively, kinetic intermixing in GaAs/AlAs multilayers. We thus obtain, with atomic plane resolution and near-atomic sensitivity, composition profiles across each interface of a multilayer stack before and after ion-implantation. Our results show significant intermixing even when only one 320 keV Ga+ ion is implanted at 77 K into each 2000 A2 area of the interface. This corresponds to an incident ion dose of 5×l012/cm2.The intermixing is not uniform along the interface. At each interface, we observe more intensely intermixed regions, whose widths correspond to those created by the damage track of a single implanted ion, as expected from Monte-Carlo simulations. It thus appears that we can directly image intermixing due to single energetic ions implanted into the multilayered GaAs/AlAs structure.

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