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Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects
Solid-State Electronics
◽
10.1016/j.sse.2012.05.041
◽
2012
◽
Vol 76
◽
pp. 77-83
◽
Cited By ~ 7
Author(s):
A. Birafane
◽
P. Aflaki
◽
A.B. Kouki
◽
F.M. Ghannouchi
Keyword(s):
Gan Hemt
◽
Trapping Effects
Download Full-text
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References
Trapping Effects on AlGaN/GaN HEMT Characteristics
Solid-State Electronics
◽
10.1016/j.sse.2020.107929
◽
2020
◽
pp. 107929
Author(s):
P. Vigneshwara Raja
◽
Jean-Christophe Nallatamby
◽
Nandita DasGupta
◽
Amitava DasGupta
Keyword(s):
Gan Hemt
◽
Trapping Effects
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Investigation of trapping effects on AlGaN/GaN HEMT under DC accelerated life testing
2016 IEEE International Reliability Physics Symposium (IRPS)
◽
10.1109/irps.2016.7574587
◽
2016
◽
Cited By ~ 1
Author(s):
W. Sun
◽
C. Lee
◽
P. Saunier
◽
S.A. Ringel
◽
A. R. Arehart
Keyword(s):
Accelerated Life Testing
◽
Life Testing
◽
Gan Hemt
◽
Accelerated Life
◽
Trapping Effects
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Characterization and Electrical Modeling Including Trapping Effects of A1n/GaN HEMT 4⨯50μmon Silicon Substrate
2018 48th European Microwave Conference (EuMC)
◽
10.23919/eumc.2018.8541541
◽
2018
◽
Author(s):
Mohamed Bouslama
◽
Ahmad Al Hajjar
◽
Raphael Sommet
◽
Farid Medjdoub
◽
Jean-Christophe Nallatamby
Keyword(s):
Silicon Substrate
◽
Electrical Modeling
◽
Gan Hemt
◽
Trapping Effects
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Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices
IEEE Transactions on Electron Devices
◽
10.1109/ted.2006.890592
◽
2007
◽
Vol 54
(3)
◽
pp. 410-417
◽
Cited By ~ 137
Author(s):
Jos Mara Tirado
◽
Jos Luis Sanchez-Rojas
◽
Jos Ignacio Izpura
Keyword(s):
Transient Response
◽
Gan Hemt
◽
Trapping Effects
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A parameter extraction method for GaN HEMT empirical large-signal model including self-heating and trapping effects
International Journal of Numerical Modelling Electronic Networks Devices and Fields
◽
10.1002/jnm.2137
◽
2015
◽
Vol 30
(1)
◽
pp. e2137
◽
Cited By ~ 13
Author(s):
Zhang Wen
◽
Yuehang Xu
◽
Changsi Wang
◽
Xiaodong Zhao
◽
Zhikai Chen
◽
...
Keyword(s):
Extraction Method
◽
Parameter Extraction
◽
Large Signal
◽
Signal Model
◽
Self Heating
◽
Gan Hemt
◽
Trapping Effects
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Impact of trapping effects on GaN HEMT based Doherty PA load-pull ratios
2015 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)
◽
10.1109/inmmic.2015.7330369
◽
2015
◽
Cited By ~ 2
Author(s):
Luis C. Nunes
◽
Pedro M. Cabral
◽
Jose C. Pedro
Keyword(s):
Gan Hemt
◽
Load Pull
◽
Trapping Effects
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Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate
2018 13th European Microwave Integrated Circuits Conference (EuMIC)
◽
10.23919/eumic.2018.8539941
◽
2018
◽
Author(s):
Mohamed Bouslama
◽
Ahmad Al Hajjar
◽
Raphael Sommet
◽
Farid Medjdoub
◽
Jean-Christophe Nallatamby
Keyword(s):
Silicon Substrate
◽
Electrical Modeling
◽
Gan Hemt
◽
Trapping Effects
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Enhanced GaN HEMT large-signal model with self-heating and trapping effects for power amplifier design
2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
◽
10.1109/imws-amp.2015.7324992
◽
2015
◽
Author(s):
Mehdi Khan
◽
Weiqiang Qian
◽
Dong Huang
◽
Lei Li
◽
Fujiang Lin
Keyword(s):
Power Amplifier
◽
Large Signal
◽
Signal Model
◽
Self Heating
◽
Gan Hemt
◽
Amplifier Design
◽
Trapping Effects
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Novel AlN/GaN HEMT Electrical Model including Trapping Effects
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC)
◽
10.1109/inmmic.2018.8430027
◽
2018
◽
Author(s):
Mohamed Bouslama
◽
Julien Couvidat
◽
Ahmad Al Hajjar
◽
Raphael Sommet
◽
Jean-Christophe Nallatamby
Keyword(s):
Electrical Model
◽
Gan Hemt
◽
Trapping Effects
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A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier
IEICE Transactions on Electronics
◽
10.1587/transele.e94.c.1193
◽
2011
◽
Vol E94-C
(7)
◽
pp. 1193-1198
◽
Cited By ~ 1
Author(s):
Akihiro ANDO
◽
Yoichiro TAKAYAMA
◽
Tsuyoshi YOSHIDA
◽
Ryo ISHIKAWA
◽
Kazuhiko HONJO
Keyword(s):
Power Amplifier
◽
Average Power
◽
Gan Hemt
◽
Class F
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