We present here a new set of equations for modeling the I–V characteristics of Field Effects Transistors (FETs), particularly optimized for AlGaN/GaN HEMTs. These equations describe the whole characteristics from negative to positive breakdown loci, and reproduce the current saturation at high level. Using this model enables to decrease the modeling process duration when a same transistor topology is used for several applications in a T/R module. It can even be used for switches design, which is the most demanding application in terms of I–V swing. Moreover, particular care was taken to accurately model the first third orders of the current derivatives, which is important for multione applications. We also focused on an accurate definition of the nonlinear elements such as capacitances for power applications. There are 18 parameters for the main current source (and six for both diodes Igs and Igd). This can be compared to Tajima's equations-based model (13 parameters) or to the Angelov model (14 parameters), which only fit the I–V characteristics for positive values of Vds. We will detail here the model formulation, and show some measurements/modeling comparisons on both I–V, [S]-parameters and temporal load-pull obtained for a 8 × 75 μm GaN HEMT, with 0.25 μm gate length.
0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design