Characterization and Electrical Modeling Including Trapping Effects of A1n/GaN HEMT 4⨯50μmon Silicon Substrate
2019 ◽
Vol 58
(SC)
◽
pp. SCCD11
◽
2011 ◽
Vol 9
(3-4)
◽
pp. 473-475
◽
2007 ◽
Vol 54
(3)
◽
pp. 410-417
◽