Trapping Effects on AlGaN/GaN HEMT Characteristics

Solid-State Electronics ◽

10.1016/j.sse.2020.107929 ◽

2020 ◽

pp. 107929

Author(s):

P. Vigneshwara Raja ◽

Jean-Christophe Nallatamby ◽

Nandita DasGupta ◽

Amitava DasGupta

Keyword(s):

Gan Hemt ◽

Trapping Effects

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Investigation of trapping effects on AlGaN/GaN HEMT under DC accelerated life testing

2016 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2016.7574587 ◽

2016 ◽

Cited By ~ 1

Author(s):

W. Sun ◽

C. Lee ◽

P. Saunier ◽

S.A. Ringel ◽

A. R. Arehart

Keyword(s):

Accelerated Life Testing ◽

Life Testing ◽

Gan Hemt ◽

Accelerated Life ◽

Trapping Effects

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Characterization and Electrical Modeling Including Trapping Effects of A1n/GaN HEMT 4⨯50μmon Silicon Substrate

2018 48th European Microwave Conference (EuMC) ◽

10.23919/eumc.2018.8541541 ◽

2018 ◽

Author(s):

Mohamed Bouslama ◽

Ahmad Al Hajjar ◽

Raphael Sommet ◽

Farid Medjdoub ◽

Jean-Christophe Nallatamby

Keyword(s):

Silicon Substrate ◽

Electrical Modeling ◽

Gan Hemt ◽

Trapping Effects

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Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects

Solid-State Electronics ◽

10.1016/j.sse.2012.05.041 ◽

2012 ◽

Vol 76 ◽

pp. 77-83 ◽

Cited By ~ 7

Author(s):

A. Birafane ◽

P. Aflaki ◽

A.B. Kouki ◽

F.M. Ghannouchi

Keyword(s):

Gan Hemt ◽

Trapping Effects

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Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices

IEEE Transactions on Electron Devices ◽

10.1109/ted.2006.890592 ◽

2007 ◽

Vol 54 (3) ◽

pp. 410-417 ◽

Cited By ~ 137

Author(s):

Jos Mara Tirado ◽

Jos Luis Sanchez-Rojas ◽

Jos Ignacio Izpura

Keyword(s):

Transient Response ◽

Gan Hemt ◽

Trapping Effects

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A parameter extraction method for GaN HEMT empirical large-signal model including self-heating and trapping effects

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2137 ◽

2015 ◽

Vol 30 (1) ◽

pp. e2137 ◽

Cited By ~ 13

Author(s):

Zhang Wen ◽

Yuehang Xu ◽

Changsi Wang ◽

Xiaodong Zhao ◽

Zhikai Chen ◽

...

Keyword(s):

Extraction Method ◽

Parameter Extraction ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemt ◽

Trapping Effects

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Impact of trapping effects on GaN HEMT based Doherty PA load-pull ratios

2015 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) ◽

10.1109/inmmic.2015.7330369 ◽

2015 ◽

Cited By ~ 2

Author(s):

Luis C. Nunes ◽

Pedro M. Cabral ◽

Jose C. Pedro

Keyword(s):

Gan Hemt ◽

Load Pull ◽

Trapping Effects

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Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate

2018 13th European Microwave Integrated Circuits Conference (EuMIC) ◽

10.23919/eumic.2018.8539941 ◽

2018 ◽

Author(s):

Mohamed Bouslama ◽

Ahmad Al Hajjar ◽

Raphael Sommet ◽

Farid Medjdoub ◽

Jean-Christophe Nallatamby

Keyword(s):

Silicon Substrate ◽

Electrical Modeling ◽

Gan Hemt ◽

Trapping Effects

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Enhanced GaN HEMT large-signal model with self-heating and trapping effects for power amplifier design

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) ◽

10.1109/imws-amp.2015.7324992 ◽

2015 ◽

Author(s):

Mehdi Khan ◽

Weiqiang Qian ◽

Dong Huang ◽

Lei Li ◽

Fujiang Lin

Keyword(s):

Power Amplifier ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemt ◽

Amplifier Design ◽

Trapping Effects

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Novel AlN/GaN HEMT Electrical Model including Trapping Effects

2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC) ◽

10.1109/inmmic.2018.8430027 ◽

2018 ◽

Author(s):

Mohamed Bouslama ◽

Julien Couvidat ◽

Ahmad Al Hajjar ◽

Raphael Sommet ◽

Jean-Christophe Nallatamby

Keyword(s):

Electrical Model ◽

Gan Hemt ◽

Trapping Effects

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A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

IEICE Transactions on Electronics ◽

10.1587/transele.e94.c.1193 ◽

2011 ◽

Vol E94-C (7) ◽

pp. 1193-1198 ◽

Cited By ~ 1

Author(s):

Akihiro ANDO ◽

Yoichiro TAKAYAMA ◽

Tsuyoshi YOSHIDA ◽

Ryo ISHIKAWA ◽

Kazuhiko HONJO

Keyword(s):

Power Amplifier ◽

Average Power ◽

Gan Hemt ◽

Class F

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