scholarly journals Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate

2018 ◽  
Author(s):  
Mohamed Bouslama ◽  
Ahmad Al Hajjar ◽  
Raphael Sommet ◽  
Farid Medjdoub ◽  
Jean-Christophe Nallatamby
Keyword(s):  
Silicon Substrate ◽  
Electrical Modeling ◽  
Gan Hemt ◽  
Trapping Effects

Characterization and Electrical Modeling Including Trapping Effects of A1n/GaN HEMT 4⨯50μmon Silicon Substrate

2018 ◽  
Author(s):  
Mohamed Bouslama ◽  
Ahmad Al Hajjar ◽  
Raphael Sommet ◽  
Farid Medjdoub ◽  
Jean-Christophe Nallatamby
Keyword(s):  
Silicon Substrate ◽  
Electrical Modeling ◽  
Gan Hemt ◽  
Trapping Effects

Trapping Effects on AlGaN/GaN HEMT Characteristics

2020 ◽  
pp. 107929
Author(s):  
P. Vigneshwara Raja ◽  
Jean-Christophe Nallatamby ◽  
Nandita DasGupta ◽  
Amitava DasGupta
Keyword(s):  
Gan Hemt ◽  
Trapping Effects

Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCD11 ◽  
Author(s):  
Lars Heuken ◽  
Muhammad Alshahed ◽  
Alessandro Ottaviani ◽  
Mohammed Alomari ◽  
Dirk Fahle ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Temperature Dependent ◽  
Gan Hemt ◽  
Conduction Mechanisms

Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate

2011 ◽  
Vol 9 (3-4) ◽  
pp. 473-475 ◽  
Author(s):  
Xueliang Zhu ◽  
Jun Ma ◽  
Tongde Huang ◽  
Ming Li ◽  
Ka Ming Wong ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Silicon Substrate ◽  
Gan Hemt

Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects

2012 ◽  
Vol 76 ◽  
pp. 77-83 ◽  
Author(s):  
A. Birafane ◽  
P. Aflaki ◽  
A.B. Kouki ◽  
F.M. Ghannouchi
Keyword(s):  
Gan Hemt ◽  
Trapping Effects

Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications

Silicon ◽  
2021 ◽  
Author(s):  
J. S. Raj Kumar ◽  
D. Nirmal ◽  
Manish Kumar Hooda ◽  
Surinder Singh ◽  
J. Ajayan ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Intensive Study ◽  
Gan Hemt ◽  
Rf Applications

Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices

2007 ◽  
Vol 54 (3) ◽  
pp. 410-417 ◽  
Author(s):  
Jos Mara Tirado ◽  
Jos Luis Sanchez-Rojas ◽  
Jos Ignacio Izpura
Keyword(s):  
Transient Response ◽  
Gan Hemt ◽  
Trapping Effects
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