Automatic parameter extraction technique for gate leakage current modeling in double gate MOSFET

Solid-State Electronics ◽

10.1016/j.sse.2013.07.009 ◽

2013 ◽

Vol 89 ◽

pp. 111-115

Author(s):

Ghader Darbandy ◽

Thomas Gneiting ◽

Heidrun Alius ◽

Joaquín Alvarado ◽

Antonio Cerdeira ◽

...

Keyword(s):

Leakage Current ◽

Parameter Extraction ◽

Extraction Technique ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Double Gate Mosfet

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Compact analytical modeling of the gate leakage current partitioning for Double Gate MOSFET device

2011 International Semiconductor Device Research Symposium (ISDRS) ◽

10.1109/isdrs.2011.6135198 ◽

2011 ◽

Author(s):

Ghader Darbandy ◽

Francois Lime ◽

Antonio Cerdeira ◽

Magali Estrada ◽

Salvador Ivan Garduno ◽

...

Keyword(s):

Leakage Current ◽

Analytical Modeling ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Double Gate Mosfet

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Influence of gate leakage current induced shot noise on the Minimum Noise Figure of InAlAs/InGaAs double-gate HEMT

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.02.026 ◽

2017 ◽

Vol 109 ◽

pp. 13-22 ◽

Author(s):

Monika Bhattacharya ◽

Jyotika Jogi ◽

R.S. Gupta ◽

Mridula Gupta

Keyword(s):

Leakage Current ◽

Noise Figure ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Minimum Noise ◽

Minimum Noise Figure

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Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2002.807446 ◽

2002 ◽

Vol 49 (12) ◽

pp. 2288-2295 ◽

Author(s):

Leland Chang ◽

K.J. Yang ◽

Yee-Chia Yeo ◽

I. Polishchuk ◽

Tsu-Jae King ◽

...

Keyword(s):

Leakage Current ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling

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Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2716874 ◽

2007 ◽

Vol 101 (7) ◽

pp. 073709 ◽

Author(s):

V. Nam Do ◽

P. Dollfus

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Gate Leakage Current ◽

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Study of gate leakage current in symmetric double gate MOSFETs with high-κ/stacked dielectrics

Thin Solid Films ◽

10.1016/j.tsf.2005.09.053 ◽

2006 ◽

Vol 504 (1-2) ◽

pp. 317-320 ◽

Author(s):

P.V. Nagaraju ◽

Amitava DasGupta

Keyword(s):

Leakage Current ◽

Double Gate ◽

Gate Leakage Current ◽

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Gate leakage current of a double gate N-MOS On (111) silicon - A quantum mechanical study

2008 International Conference on Computer and Communication Engineering ◽

10.1109/iccce.2008.4580749 ◽

2008 ◽

Author(s):

Sabbir Ahmed ◽

Ahsan-Ul-Alam ◽

Md. Kawsar Alam ◽

Quazi Deen Mohd Khosru

Keyword(s):

Leakage Current ◽

Quantum Mechanical ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Mechanical Study ◽

Quantum Mechanical Study

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Quantum mechanical study of gate leakage current in double gate MOS structures

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422240 ◽

2007 ◽

Author(s):

S. Ahmed ◽

M. K. Alam ◽

A. Alam ◽

M. G. Rabbani ◽

Q. D. M. Khosru

Keyword(s):

Leakage Current ◽

Quantum Mechanical ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

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Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979428 ◽

2002 ◽

Author(s):

Leland Chang ◽

K.J. Yang ◽

Yee-Chia Yeo ◽

Yang-Kyu Choi ◽

Tsu-Jae King ◽

...

Keyword(s):

Leakage Current ◽

Thin Body ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage ◽

Direct Tunneling

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Gate leakage current in double-gate MOSFETs with Si/SiO2 interface model from first principle calculations

10th IEEE International Conference on Nanotechnology ◽

10.1109/nano.2010.5697871 ◽

2010 ◽

Author(s):

Yongjin Park ◽

Ki-jeong Kong ◽

Hyunju Chang ◽

Mincheol Shin

Keyword(s):

Leakage Current ◽

First Principle ◽

Double Gate ◽

Interface Model ◽

Gate Leakage Current ◽

Gate Leakage ◽

First Principle Calculations

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Gate leakage current partitioning in nanoscale double gate MOSFETs, using compact analytical model

Solid-State Electronics ◽

10.1016/j.sse.2012.05.006 ◽

2012 ◽

Vol 75 ◽

pp. 22-27 ◽

Author(s):

Ghader Darbandy ◽

François Lime ◽

Antonio Cerdeira ◽

Magali Estrada ◽

Salvador Ivan Garduño ◽

...

Keyword(s):

Leakage Current ◽

Analytical Model ◽

Double Gate ◽

Gate Leakage Current ◽

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