Electrochromic switchable mirror foil with tantalum oxide thin film prepared by reactive DC magnetron sputtering in hydrogen-containing gas

2011 ◽  
Vol 205 (15) ◽  
pp. 3956-3960 ◽  
Author(s):  
Kazuki Tajima ◽  
Hiromi Hotta ◽  
Yasusei Yamada ◽  
Masahisa Okada ◽  
Kazuki Yoshimura
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Tantalum Oxide ◽  
Oxide Thin Film ◽  
Dc Magnetron Sputtering ◽  
Switchable Mirror

Reactive DC sputter-deposited tantalum oxide thin film for all-solid-state switchable mirror

Vacuum ◽  
2008 ◽  
Vol 83 (3) ◽  
pp. 602-605 ◽  
Author(s):  
Kazuki Tajima ◽  
Yasusei Yamada ◽  
Shanhu Bao ◽  
Masahisa Okada ◽  
Kazuki Yoshimura
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Tantalum Oxide ◽  
Oxide Thin Film ◽  
Switchable Mirror ◽  
Sputter Deposited

DC Magnetron Sputtering Deposition of Room-Temperature Phase Transition Vanadium Oxide Film

2014 ◽  
Vol 1053 ◽  
pp. 332-336 ◽  
Author(s):  
Ya Qiao ◽  
Yuan Lu ◽  
Hua Yang ◽  
Yong Shun Ling
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Room Temperature ◽  
Annealed Film ◽  
Oxide Thin Film ◽  
Temperature Phase ◽  
Dc Magnetron Sputtering ◽  
Main Component

Low valence vanadium oxide thin film was deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target. And then it was annealed in an atmosphere of oxygen/argon mixture at the temperature of 450°C for 2hours to obtain VO2thin film possessing the ability of phase transition. The XRD patterns and resistance-temperature (R-T) curves of the film before and after the annealing were given. The results show that: the as-deposited film, whose main component is V2O3, presents no phase transition and its resistance changes from 1.26 kΩ~1.01kΩ while its temperature rising from room temperature to 80°C; the annealed film, whose main component is VO2, presents a phase transition when its temperature rising from room temperature to 80°C and its resistance changes from 10kΩ to 60Ω, more than two orders. And the phase transition temperature of the film deposited is only 30°C.

Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering

2016 ◽  
Vol 306 ◽  
pp. 346-350 ◽  
Author(s):  
N. Khemasiri ◽  
S. Jessadaluk ◽  
C. Chananonnawathorn ◽  
S. Vuttivong ◽  
T. Lertvanithphol ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Tantalum Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Band Engineering ◽  
Reactive Gas
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